OST120N65HEMF Todos los transistores

 

OST120N65HEMF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OST120N65HEMF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 536 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 143 nS
   Coesⓘ - Capacitancia de salida, typ: 297 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

OST120N65HEMF Datasheet (PDF)

 ..1. Size:774K  oriental semi
 ost120n65hemf.pdf pdf_icon

OST120N65HEMF

OST120N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST120N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

 4.1. Size:787K  oriental semi
 ost120n65h4smf.pdf pdf_icon

OST120N65HEMF

OST120N65H4SMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H4SMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

 4.2. Size:767K  oriental semi
 ost120n65h5smf.pdf pdf_icon

OST120N65HEMF

OST120N65H5SMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H5SMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

 4.3. Size:813K  oriental semi
 ost120n65h4umf.pdf pdf_icon

OST120N65HEMF

OST120N65H4UMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H4UMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

MOSTRAR MÁS

Otros transistores... GT30F122 , SG40T120DB , SG60T120UDB3 , SGT60U65FD1PN , SGT60U65FD1PT , OST120N65H4SMF , OST120N65H4UMF , OST120N65H5SMF , TGD30N40P , OST15N65DRF , OST15N65FRF , OST15N65KRF , OST15N65PRF , OST160N65H5MF , OST20N135HRF , OST25N65FMF , OST25N65PMF .

History: SGP15N120 | STGWT60H60DLFB | TGAN20N120FD | HIA20N140IH-DA | F3L30R06W1E3_B11

 

 
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