OST120N65HEMF datasheet, аналоги, основные параметры

Наименование: OST120N65HEMF  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 536 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 160 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃

tr ⓘ - Время нарастания типовое: 143 nS

Coesⓘ - Выходная емкость, типовая: 297 pF

Тип корпуса: TO247

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 Аналог (замена) для OST120N65HEMF

- подбор ⓘ IGBT транзистора по параметрам

 

OST120N65HEMF даташит

 ..1. Size:774K  oriental semi
 ost120n65hemf.pdf pdf_icon

OST120N65HEMF

OST120N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST120N65HEMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

 4.1. Size:787K  oriental semi
 ost120n65h4smf.pdf pdf_icon

OST120N65HEMF

OST120N65H4SMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H4SMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

 4.2. Size:767K  oriental semi
 ost120n65h5smf.pdf pdf_icon

OST120N65HEMF

OST120N65H5SMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H5SMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

 4.3. Size:813K  oriental semi
 ost120n65h4umf.pdf pdf_icon

OST120N65HEMF

OST120N65H4UMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H4UMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... GT30F122, SG40T120DB, SG60T120UDB3, SGT60U65FD1PN, SGT60U65FD1PT, OST120N65H4SMF, OST120N65H4UMF, OST120N65H5SMF, CRG15T120BNR3S, OST15N65DRF, OST15N65FRF, OST15N65KRF, OST15N65PRF, OST160N65H5MF, OST20N135HRF, OST25N65FMF, OST25N65PMF