OST120N65HEMF Datasheet. Specs and Replacement

Type Designator: OST120N65HEMF  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 536 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 160 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 143 nS

Coesⓘ - Output Capacitance, typ: 297 pF

Package: TO247

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OST120N65HEMF datasheet

 ..1. Size:774K  oriental semi
 ost120n65hemf.pdf pdf_icon

OST120N65HEMF

OST120N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST120N65HEMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn... See More ⇒

 4.1. Size:787K  oriental semi
 ost120n65h4smf.pdf pdf_icon

OST120N65HEMF

OST120N65H4SMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H4SMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec... See More ⇒

 4.2. Size:767K  oriental semi
 ost120n65h5smf.pdf pdf_icon

OST120N65HEMF

OST120N65H5SMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H5SMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec... See More ⇒

 4.3. Size:813K  oriental semi
 ost120n65h4umf.pdf pdf_icon

OST120N65HEMF

OST120N65H4UMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H4UMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec... See More ⇒

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Specs: GT30F122, SG40T120DB, SG60T120UDB3, SGT60U65FD1PN, SGT60U65FD1PT, OST120N65H4SMF, OST120N65H4UMF, OST120N65H5SMF, CRG15T120BNR3S, OST15N65DRF, OST15N65FRF, OST15N65KRF, OST15N65PRF, OST160N65H5MF, OST20N135HRF, OST25N65FMF, OST25N65PMF

Keywords - OST120N65HEMF transistor spec

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