OST25N65PMF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: OST25N65PMF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 250
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 33
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.6
Tensión máxima de puerta-umbral |VGE(th)|, V: 6
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 43
Capacitancia de salida (Cc), typ, pF: 62
Carga total de la puerta (Qg), typ, nC: 44
Paquete / Cubierta: TO220
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OST25N65PMF Datasheet (PDF)
ost25n65pmf.pdf
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OST25N65PMF Enhancement Mode N-Channel Power IGBT General Description OST25N65PMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost25n65fmf.pdf
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OST25N65FMF Enhancement Mode N-Channel Power IGBT General Description OST25N65FMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
Otros transistores... OST120N65HEMF , OST15N65DRF , OST15N65FRF , OST15N65KRF , OST15N65PRF , OST160N65H5MF , OST20N135HRF , OST25N65FMF , CRG75T60AK3HD , OST30N65HMF , OST30N65KTXF , OST40N120HEMF , OST40N120HMF , OST40N65HEMF , OST40N65HMF , OST40N65HXF , OST40N65KMF .
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