All IGBT. OST25N65PMF Datasheet

 

OST25N65PMF IGBT. Datasheet pdf. Equivalent


   Type Designator: OST25N65PMF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 250
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 33
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 43
   Collector Capacity (Cc), typ, pF: 62
   Total Gate Charge (Qg), typ, nC: 44
   Package: TO220

 OST25N65PMF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

OST25N65PMF Datasheet (PDF)

 ..1. Size:815K  oriental semi
ost25n65pmf.pdf

OST25N65PMF OST25N65PMF

OST25N65PMF Enhancement Mode N-Channel Power IGBT General Description OST25N65PMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.1. Size:687K  oriental semi
ost25n65fmf.pdf

OST25N65PMF OST25N65PMF

OST25N65FMF Enhancement Mode N-Channel Power IGBT General Description OST25N65FMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

Datasheet: OST120N65HEMF , OST15N65DRF , OST15N65FRF , OST15N65KRF , OST15N65PRF , OST160N65H5MF , OST20N135HRF , OST25N65FMF , CRG75T60AK3HD , OST30N65HMF , OST30N65KTXF , OST40N120HEMF , OST40N120HMF , OST40N65HEMF , OST40N65HMF , OST40N65HXF , OST40N65KMF .

 

 
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