OST25N65PMF Datasheet and Replacement
Type Designator: OST25N65PMF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 33 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 43 nS
Coesⓘ - Output Capacitance, typ: 62 pF
Qg ⓘ - Total Gate Charge, typ: 44 nC
Package: TO220
OST25N65PMF substitution
OST25N65PMF Datasheet (PDF)
ost25n65pmf.pdf

OST25N65PMF Enhancement Mode N-Channel Power IGBT General Description OST25N65PMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost25n65fmf.pdf

OST25N65FMF Enhancement Mode N-Channel Power IGBT General Description OST25N65FMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
Datasheet: OST120N65HEMF , OST15N65DRF , OST15N65FRF , OST15N65KRF , OST15N65PRF , OST160N65H5MF , OST20N135HRF , OST25N65FMF , MGD623S , OST30N65HMF , OST30N65KTXF , OST40N120HEMF , OST40N120HMF , OST40N65HEMF , OST40N65HMF , OST40N65HXF , OST40N65KMF .
History: IRGB4062DPBF | STGB15M65DF2 | BLQG50T65FDLA-F
Keywords - OST25N65PMF transistor datasheet
OST25N65PMF cross reference
OST25N65PMF equivalent finder
OST25N65PMF lookup
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OST25N65PMF replacement
History: IRGB4062DPBF | STGB15M65DF2 | BLQG50T65FDLA-F



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