OST30N65KTXF Todos los transistores

 

OST30N65KTXF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OST30N65KTXF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 250 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 42 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 44 nS
   Coesⓘ - Capacitancia de salida, typ: 64 pF
   Paquete / Cubierta: TO263
 

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OST30N65KTXF Datasheet (PDF)

 ..1. Size:739K  oriental semi
 ost30n65ktxf.pdf pdf_icon

OST30N65KTXF

OST30N65KTXF Enhancement Mode N-Channel Power IGBT General Description OST30N65KTXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 6.1. Size:568K  oriental semi
 ost30n65hmf.pdf pdf_icon

OST30N65KTXF

OST30N65HMF Enhancement Mode N-Channel Power IGBT General Description OST30N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

Otros transistores... OST15N65FRF , OST15N65KRF , OST15N65PRF , OST160N65H5MF , OST20N135HRF , OST25N65FMF , OST25N65PMF , OST30N65HMF , STGW60V60DF , OST40N120HEMF , OST40N120HMF , OST40N65HEMF , OST40N65HMF , OST40N65HXF , OST40N65KMF , OST40N65PMF , OST50N65H4EWF .

History: IXSN50N60BD3 | DIM400GCM33-F | IXSN35N100U1 | MG1225H-XBN2MM | STGWA75H65DFB2 | OST160N65H5MF | MIXA30WB1200TED

 

 
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