OST30N65KTXF Todos los transistores

 

OST30N65KTXF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OST30N65KTXF

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 42 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 44 nS

Coesⓘ - Capacitancia de salida, typ: 64 pF

Encapsulados: TO263

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OST30N65KTXF datasheet

 ..1. Size:739K  oriental semi
 ost30n65ktxf.pdf pdf_icon

OST30N65KTXF

OST30N65KTXF Enhancement Mode N-Channel Power IGBT General Description OST30N65KTXF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 6.1. Size:568K  oriental semi
 ost30n65hmf.pdf pdf_icon

OST30N65KTXF

OST30N65HMF Enhancement Mode N-Channel Power IGBT General Description OST30N65HMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

Otros transistores... OST15N65FRF , OST15N65KRF , OST15N65PRF , OST160N65H5MF , OST20N135HRF , OST25N65FMF , OST25N65PMF , OST30N65HMF , IRG4PC50UD , OST40N120HEMF , OST40N120HMF , OST40N65HEMF , OST40N65HMF , OST40N65HXF , OST40N65KMF , OST40N65PMF , OST50N65H4EWF .

History: DM2G100SH6N | DM2G150SH6A | OST25N65FMF | F3L400R07ME4_B23 | OST30N65HMF

 

 

 

 

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