OST30N65KTXF IGBT. Datasheet pdf. Equivalent
Type Designator: OST30N65KTXF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 250
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 42
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
Maximum G-E Threshold Voltag |VGE(th)|, V: 6
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 44
Collector Capacity (Cc), typ, pF: 64
Total Gate Charge (Qg), typ, nC: 44
Package: TO263
OST30N65KTXF Transistor Equivalent Substitute - IGBT Cross-Reference Search
OST30N65KTXF Datasheet (PDF)
ost30n65ktxf.pdf
OST30N65KTXF Enhancement Mode N-Channel Power IGBT General Description OST30N65KTXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost30n65hmf.pdf
OST30N65HMF Enhancement Mode N-Channel Power IGBT General Description OST30N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
Datasheet: OST15N65FRF , OST15N65KRF , OST15N65PRF , OST160N65H5MF , OST20N135HRF , OST25N65FMF , OST25N65PMF , OST30N65HMF , IRG4PF50W , OST40N120HEMF , OST40N120HMF , OST40N65HEMF , OST40N65HMF , OST40N65HXF , OST40N65KMF , OST40N65PMF , OST50N65H4EWF .
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