OST50N65HXF Todos los transistores

 

OST50N65HXF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OST50N65HXF
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 375 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 100 nS
   Coesⓘ - Capacitancia de salida, typ: 133 pF
   Qgⓘ - Carga total de la puerta, typ: 105 nC
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de OST50N65HXF IGBT

   - Selección ⓘ de transistores por parámetros

 

OST50N65HXF Datasheet (PDF)

 ..1. Size:745K  oriental semi
 ost50n65hxf.pdf pdf_icon

OST50N65HXF

OST50N65HXF Enhancement Mode N-Channel Power IGBT General Description OST50N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.1. Size:732K  oriental semi
 ost50n65hmf.pdf pdf_icon

OST50N65HXF

OST50N65HMF Enhancement Mode N-Channel Power IGBT General Description OST50N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.2. Size:535K  oriental semi
 ost50n65hf-d.pdf pdf_icon

OST50N65HXF

OST50N65HF-D Enhancement Mode N-Channel Power IGBT General Description OST50N65HF-D uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.3. Size:756K  oriental semi
 ost50n65hewf.pdf pdf_icon

OST50N65HXF

MOSTRAR MÁS

Otros transistores... OST50N65H4EWF , OST50N65HEWF , OST50N65HF , OST50N65HF-D , OST50N65HM2F , OST50N65HMF , OST50N65HSNF , OST50N65HSZF , IRG7S313U , OST50N65HZF , OST60N65H4EMF , OST60N65HEMF , OST60N65HMF , OST60N65HSMF , OST60N65HSXF , OST60N65HSZF , OST60N65HXF .

History: AOB5B65M1 | BLG75T65FDK-F | NGTB40N120LWG | IKFW60N60DH3E

 

 
Back to Top

 


 
.