OST50N65HXF IGBT. Datasheet pdf. Equivalent
Type Designator: OST50N65HXF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 133 pF
Qgⓘ - Total Gate Charge, typ: 105 nC
Package: TO247
OST50N65HXF Transistor Equivalent Substitute - IGBT Cross-Reference Search
OST50N65HXF Datasheet (PDF)
ost50n65hxf.pdf
OST50N65HXF Enhancement Mode N-Channel Power IGBT General Description OST50N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost50n65hmf.pdf
OST50N65HMF Enhancement Mode N-Channel Power IGBT General Description OST50N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost50n65hf-d.pdf
OST50N65HF-D Enhancement Mode N-Channel Power IGBT General Description OST50N65HF-D uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost50n65hszf.pdf
OST50N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost50n65hm2f.pdf
OST50N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST50N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost50n65hsnf.pdf
OST50N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost50n65hzf.pdf
OST50N65HZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost50n65hf.pdf
OST50N65HF Enhancement Mode N-Channel Power IGBT General Description OST50N65HF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technology
Datasheet: OST50N65H4EWF , OST50N65HEWF , OST50N65HF , OST50N65HF-D , OST50N65HM2F , OST50N65HMF , OST50N65HSNF , OST50N65HSZF , BT15T120ANF , OST50N65HZF , OST60N65H4EMF , OST60N65HEMF , OST60N65HMF , OST60N65HSMF , OST60N65HSXF , OST60N65HSZF , OST60N65HXF .
LIST
Last Update
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2