Справочник IGBT. OST50N65HXF

 

OST50N65HXF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: OST50N65HXF
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 375 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 100 nS
   Coesⓘ - Выходная емкость, типовая: 133 pF
   Qgⓘ - Общий заряд затвора, typ: 105 nC
   Тип корпуса: TO247

 Аналог (замена) для OST50N65HXF

 

 

OST50N65HXF Datasheet (PDF)

 ..1. Size:745K  oriental semi
ost50n65hxf.pdf

OST50N65HXF
OST50N65HXF

OST50N65HXF Enhancement Mode N-Channel Power IGBT General Description OST50N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.1. Size:732K  oriental semi
ost50n65hmf.pdf

OST50N65HXF
OST50N65HXF

OST50N65HMF Enhancement Mode N-Channel Power IGBT General Description OST50N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.2. Size:535K  oriental semi
ost50n65hf-d.pdf

OST50N65HXF
OST50N65HXF

OST50N65HF-D Enhancement Mode N-Channel Power IGBT General Description OST50N65HF-D uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.3. Size:756K  oriental semi
ost50n65hewf.pdf

OST50N65HXF
OST50N65HXF

 5.4. Size:755K  oriental semi
ost50n65h4ewf.pdf

OST50N65HXF
OST50N65HXF

 5.5. Size:747K  oriental semi
ost50n65hszf.pdf

OST50N65HXF
OST50N65HXF

OST50N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.6. Size:765K  oriental semi
ost50n65hm2f.pdf

OST50N65HXF
OST50N65HXF

OST50N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST50N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.7. Size:752K  oriental semi
ost50n65hsnf.pdf

OST50N65HXF
OST50N65HXF

OST50N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.8. Size:617K  oriental semi
ost50n65hzf.pdf

OST50N65HXF
OST50N65HXF

OST50N65HZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.9. Size:698K  oriental semi
ost50n65hf.pdf

OST50N65HXF
OST50N65HXF

OST50N65HF Enhancement Mode N-Channel Power IGBT General Description OST50N65HF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technology

Другие IGBT... OST50N65H4EWF , OST50N65HEWF , OST50N65HF , OST50N65HF-D , OST50N65HM2F , OST50N65HMF , OST50N65HSNF , OST50N65HSZF , BT15T120ANF , OST50N65HZF , OST60N65H4EMF , OST60N65HEMF , OST60N65HMF , OST60N65HSMF , OST60N65HSXF , OST60N65HSZF , OST60N65HXF .

 

 
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