OST60N65HXF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: OST60N65HXF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 375 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 104 nS
Coesⓘ - Capacitancia de salida, typ: 183 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de OST60N65HXF IGBT
OST60N65HXF Datasheet (PDF)
ost60n65hxf.pdf

OST60N65HXF Enhancement Mode N-Channel Power IGBT General Description OST60N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost60n65hsmf.pdf

OST60N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
Otros transistores... OST50N65HXF , OST50N65HZF , OST60N65H4EMF , OST60N65HEMF , OST60N65HMF , OST60N65HSMF , OST60N65HSXF , OST60N65HSZF , FGPF4533 , OST75N120HM2F , OST75N65HEM2F , OST75N65HEMF , OST75N65HLMF , OST75N65HM2F , OST75N65HMF , OST75N65HNF , OST75N65HSMF .
History: IRG7PH35UD1-EP | IXSM30N60 | IXEN60N120 | IRG4BC30K | SII75N06 | MKI100-12F8 | SPM1006
History: IRG7PH35UD1-EP | IXSM30N60 | IXEN60N120 | IRG4BC30K | SII75N06 | MKI100-12F8 | SPM1006



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