OST60N65HXF Todos los transistores

 

OST60N65HXF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OST60N65HXF

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 375 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

trⓘ - Tiempo de subida, typ: 104 nS

Coesⓘ - Capacitancia de salida, typ: 183 pF

Encapsulados: TO247

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OST60N65HXF datasheet

 ..1. Size:733K  oriental semi
 ost60n65hxf.pdf pdf_icon

OST60N65HXF

OST60N65HXF Enhancement Mode N-Channel Power IGBT General Description OST60N65HXF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.1. Size:789K  oriental semi
 ost60n65h4ewf.pdf pdf_icon

OST60N65HXF

 5.2. Size:817K  oriental semi
 ost60n65h4emf.pdf pdf_icon

OST60N65HXF

 5.3. Size:606K  oriental semi
 ost60n65hsmf.pdf pdf_icon

OST60N65HXF

OST60N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HSMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

MOSTRAR MÁS

Otros transistores... OST50N65HXF , OST50N65HZF , OST60N65H4EMF , OST60N65HEMF , OST60N65HMF , OST60N65HSMF , OST60N65HSXF , OST60N65HSZF , KGF75N65KDF , OST75N120HM2F , OST75N65HEM2F , OST75N65HEMF , OST75N65HLMF , OST75N65HM2F , OST75N65HMF , OST75N65HNF , OST75N65HSMF .

 

 

 


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