OST60N65HXF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: OST60N65HXF
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 375 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.5 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 104 nS
Coesⓘ - Выходная емкость, типовая: 183 pF
Qgⓘ - Общий заряд затвора, typ: 102 nC
Тип корпуса: TO247
Аналог (замена) для OST60N65HXF
OST60N65HXF Datasheet (PDF)
ost60n65hxf.pdf
OST60N65HXF Enhancement Mode N-Channel Power IGBT General Description OST60N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost60n65hsmf.pdf
OST60N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost60n65hemf.pdf
OST60N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost60n65hszf.pdf
OST60N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST60N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost60n65hsxf.pdf
OST60N65HSXF Enhancement Mode N-Channel Power IGBT General Description OST60N65HSXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost60n65hmf.pdf
OST60N65HMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
Другие IGBT... OST50N65HXF , OST50N65HZF , OST60N65H4EMF , OST60N65HEMF , OST60N65HMF , OST60N65HSMF , OST60N65HSXF , OST60N65HSZF , YGW75N65F1 , OST75N120HM2F , OST75N65HEM2F , OST75N65HEMF , OST75N65HLMF , OST75N65HM2F , OST75N65HMF , OST75N65HNF , OST75N65HSMF .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2