All IGBT. OST60N65HXF Datasheet

 

OST60N65HXF Datasheet and Replacement


   Type Designator: OST60N65HXF
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 104 nS
   Coesⓘ - Output Capacitance, typ: 183 pF
   Package: TO247
 

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OST60N65HXF Datasheet (PDF)

 ..1. Size:733K  oriental semi
ost60n65hxf.pdf pdf_icon

OST60N65HXF

OST60N65HXF Enhancement Mode N-Channel Power IGBT General Description OST60N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.1. Size:789K  oriental semi
ost60n65h4ewf.pdf pdf_icon

OST60N65HXF

 5.2. Size:817K  oriental semi
ost60n65h4emf.pdf pdf_icon

OST60N65HXF

 5.3. Size:606K  oriental semi
ost60n65hsmf.pdf pdf_icon

OST60N65HXF

OST60N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

Datasheet: OST50N65HXF , OST50N65HZF , OST60N65H4EMF , OST60N65HEMF , OST60N65HMF , OST60N65HSMF , OST60N65HSXF , OST60N65HSZF , FGPF4533 , OST75N120HM2F , OST75N65HEM2F , OST75N65HEMF , OST75N65HLMF , OST75N65HM2F , OST75N65HMF , OST75N65HNF , OST75N65HSMF .

History: SL20T65K1 | APT65GP60JDF2

Keywords - OST60N65HXF transistor datasheet

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