OST80N65HEMF Todos los transistores

 

OST80N65HEMF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OST80N65HEMF
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 375 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 114 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 140 nS
   Coesⓘ - Capacitancia de salida, typ: 153 pF
   Qgⓘ - Carga total de la puerta, typ: 174 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

OST80N65HEMF Datasheet (PDF)

 ..1. Size:767K  oriental semi
 ost80n65hemf.pdf pdf_icon

OST80N65HEMF

OST80N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST80N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.1. Size:831K  oriental semi
 ost80n65hevf.pdf pdf_icon

OST80N65HEMF

OST80N65HEVF Enhancement Mode N-Channel Power IGBT General Description OST80N65HEVF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.2. Size:900K  oriental semi
 ost80n65hewf.pdf pdf_icon

OST80N65HEMF

 5.1. Size:804K  oriental semi
 ost80n65h4emf.pdf pdf_icon

OST80N65HEMF

OST80N65H4EMF Enhancement Mode N-Channel Power IGBT General Description OST80N65H4EMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

MOSTRAR MÁS

Otros transistores... OST75N65HSMF , OST75N65HSNF , OST75N65HSVF , OST75N65HSXF , OST75N65HSZF , OST75N65HTNF , OST75N65HZF , OST80N65H4EMF , RJP30H2A , OST80N65HEVF , OST80N65HSMF , OST90N60HCZF , OST90N65HM2F , OSC80N65HF , OSC90N65HF , RJH3047 , GT30F123 .

History: AP30G120SW | RJH60T4DPQ-A0 | SGB15N60HS | APT15GP60BDLG | RJP63F3DPP-M0 | IRGP4066D-E | APT15GP60BDQ1G

 

 
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