OST80N65HEMF Datasheet and Replacement
Type Designator: OST80N65HEMF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 114 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 140 nS
Coesⓘ - Output Capacitance, typ: 153 pF
Qg ⓘ - Total Gate Charge, typ: 174 nC
Package: TO247
OST80N65HEMF substitution
OST80N65HEMF Datasheet (PDF)
ost80n65hemf.pdf

OST80N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST80N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost80n65hevf.pdf

OST80N65HEVF Enhancement Mode N-Channel Power IGBT General Description OST80N65HEVF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost80n65h4emf.pdf

OST80N65H4EMF Enhancement Mode N-Channel Power IGBT General Description OST80N65H4EMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn
Datasheet: OST75N65HSMF , OST75N65HSNF , OST75N65HSVF , OST75N65HSXF , OST75N65HSZF , OST75N65HTNF , OST75N65HZF , OST80N65H4EMF , FGPF4536 , OST80N65HEVF , OST80N65HSMF , OST90N60HCZF , OST90N65HM2F , OSC80N65HF , OSC90N65HF , RJH3047 , GT30F123 .
History: SGH40N60UF
Keywords - OST80N65HEMF transistor datasheet
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History: SGH40N60UF



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