Справочник IGBT. OST80N65HEMF

 

OST80N65HEMF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: OST80N65HEMF
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 375
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 114
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.5
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 5.5
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 140
   Емкость коллектора типовая (Cc), pf: 153
   Общий заряд затвора (Qg), typ, nC: 174
   Тип корпуса: TO247

 Аналог (замена) для OST80N65HEMF

 

 

OST80N65HEMF Datasheet (PDF)

 ..1. Size:767K  oriental semi
 ost80n65hemf.pdf

OST80N65HEMF OST80N65HEMF

OST80N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST80N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.1. Size:831K  oriental semi
 ost80n65hevf.pdf

OST80N65HEMF OST80N65HEMF

OST80N65HEVF Enhancement Mode N-Channel Power IGBT General Description OST80N65HEVF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.2. Size:900K  oriental semi
 ost80n65hewf.pdf

OST80N65HEMF OST80N65HEMF

 5.1. Size:804K  oriental semi
 ost80n65h4emf.pdf

OST80N65HEMF OST80N65HEMF

OST80N65H4EMF Enhancement Mode N-Channel Power IGBT General Description OST80N65H4EMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

 5.2. Size:884K  oriental semi
 ost80n65h4ewf.pdf

OST80N65HEMF OST80N65HEMF

 5.3. Size:719K  oriental semi
 ost80n65hmf.pdf

OST80N65HEMF OST80N65HEMF

OST80N65HMF Enhancement Mode N-Channel Power IGBT General Description OST80N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.4. Size:803K  oriental semi
 ost80n65hsmf.pdf

OST80N65HEMF OST80N65HEMF

OST80N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST80N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

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