GT30J127 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GT30J127
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 25
Tensión máxima colector-emisor |Vce|, V: 600
Colector de Corriente Continua a 25℃ |Ic|, A: 30
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.6
Temperatura máxima de unión (Tj), ℃: 150
Paquete / Cubierta: TO220F
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GT30J127 Datasheet (PDF)
gt30j122.pdf
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gt30j121.pdf
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gt30j122a.pdf
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gt30j126.pdf
GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) Low saturation voltage: VCE (sat) =
Otros transistores... OST80N65HEVF , OST80N65HSMF , OST90N60HCZF , OST90N65HM2F , OSC80N65HF , OSC90N65HF , RJH3047 , GT30F123 , BT40T60ANF , OST50N65HEWF , OST50N65KEW2F , OST60N65H4EMF , OST60N65H4EWF , OST75N65HSWF , OST80N65H4EWF , OST80N65HEWF , SGT10T60SD1S .
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