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GT30J127 Specs and Replacement

The GT30J127 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for power electronics applications. With a voltage rating of 600V and current capability of 30A, it combines the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. This IGBT offers fast switching, high efficiency, and robust thermal performance, making it suitable for inverters, motor drives, and power supplies. Its rugged design ensures reliability under high voltage and current stress, while minimizing switching losses and improving overall system efficiency.


   Type Designator: GT30J127
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 25 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   Package: TO220F
 

 GT30J127 Substitution

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GT30J127 specs

 7.1. Size:321K  toshiba
 gt30j122.pdf pdf_icon

GT30J127

GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT Unit mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Enhancement mode type High speed tf = 0.25 s (Typ.) (IC = 50A) Low saturation voltage VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Characteristic Symbol Rating Unit Coll... See More ⇒

 7.2. Size:182K  toshiba
 gt30j121.pdf pdf_icon

GT30J127

GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Unit mm Fast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS) Operating frequency up to 50 kHz (reference) High speed tf = 0.05 s (typ.) Low switching loss Eon = 1.00 mJ (typ.) Eoff = 0.80 mJ (typ... See More ⇒

 7.3. Size:192K  toshiba
 gt30j122a.pdf pdf_icon

GT30J127

GT30J122A Discrete IGBTs Silicon N-Channel IGBT GT30J122A GT30J122A GT30J122A GT30J122A 1. Applications 1. Applications 1. Applications 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) Applications Note The product(s) described herein should not be used for any other application. 2. F... See More ⇒

 7.4. Size:187K  toshiba
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GT30J127

GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Unit mm Fast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS) High speed tf = 0.05 s (typ.) Low switching loss Eon = 1.00 mJ (typ.) Eoff = 0.80 mJ (typ.) Low saturation voltage VCE (sat) = ... See More ⇒

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Specs: OST80N65HEVF , OST80N65HSMF , OST90N60HCZF , OST90N65HM2F , OSC80N65HF , OSC90N65HF , RJH3047 , GT30F123 , RJP30E2DPP-M0 , OST50N65HEWF , OST50N65KEW2F , OST60N65H4EMF , OST60N65H4EWF , OST75N65HSWF , OST80N65H4EWF , OST80N65HEWF , SGT10T60SD1S .

Keywords - GT30J127 transistor spec

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