All IGBT. GT30J127 Datasheet

 

GT30J127 Datasheet and Replacement


   Type Designator: GT30J127
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 25 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   Package: TO220F
 

 GT30J127 substitution

   - IGBT ⓘ Cross-Reference Search

 

GT30J127 Datasheet (PDF)

 7.1. Size:321K  toshiba
gt30j122.pdf pdf_icon

GT30J127

GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT Unit: mmCURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Enhancement mode type High speed: tf = 0.25s (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Characteristic Symbol Rating UnitColl

 7.2. Size:182K  toshiba
gt30j121.pdf pdf_icon

GT30J127

GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ

 7.3. Size:192K  toshiba
gt30j122a.pdf pdf_icon

GT30J127

GT30J122ADiscrete IGBTs Silicon N-Channel IGBTGT30J122AGT30J122AGT30J122AGT30J122A1. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) ApplicationsNote: The product(s) described herein should not be used for any other application.2. F

 7.4. Size:187K  toshiba
gt30j126.pdf pdf_icon

GT30J127

GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) Low saturation voltage: VCE (sat) =

Datasheet: OST80N65HEVF , OST80N65HSMF , OST90N60HCZF , OST90N65HM2F , OSC80N65HF , OSC90N65HF , RJH3047 , GT30F123 , FGA25N120ANTD , OST50N65HEWF , OST50N65KEW2F , OST60N65H4EMF , OST60N65H4EWF , OST75N65HSWF , OST80N65H4EWF , OST80N65HEWF , SGT10T60SD1S .

Keywords - GT30J127 transistor datasheet

 GT30J127 cross reference
 GT30J127 equivalent finder
 GT30J127 lookup
 GT30J127 substitution
 GT30J127 replacement

 

 
Back to Top

 


 
.