All IGBT. GT30J127 Datasheet

 

GT30J127 IGBT. Datasheet pdf. Equivalent


   Type Designator: GT30J127
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 25 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Package: TO220F

 GT30J127 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT30J127 Datasheet (PDF)

 7.1. Size:321K  toshiba
 gt30j122.pdf

GT30J127 GT30J127

GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT Unit: mmCURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Enhancement mode type High speed: tf = 0.25s (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Characteristic Symbol Rating UnitColl

 7.2. Size:182K  toshiba
 gt30j121.pdf

GT30J127 GT30J127

GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ

 7.3. Size:192K  toshiba
 gt30j122a.pdf

GT30J127 GT30J127

GT30J122ADiscrete IGBTs Silicon N-Channel IGBTGT30J122AGT30J122AGT30J122AGT30J122A1. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) ApplicationsNote: The product(s) described herein should not be used for any other application.2. F

 7.4. Size:187K  toshiba
 gt30j126.pdf

GT30J127 GT30J127

GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) Low saturation voltage: VCE (sat) =

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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