OST50N65KEW2F Todos los transistores

 

OST50N65KEW2F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OST50N65KEW2F
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 200
   Tensión máxima colector-emisor |Vce|, V: 650
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 80
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.7
   Tensión máxima de puerta-umbral |VGE(th)|, V: 5
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 41
   Capacitancia de salida (Cc), typ, pF: 276
   Carga total de la puerta (Qg), typ, nC: 78
   Paquete / Cubierta: TO263

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OST50N65KEW2F Datasheet (PDF)

 ..1. Size:595K  oriental semi
ost50n65kew2f.pdf

OST50N65KEW2F OST50N65KEW2F

 6.1. Size:732K  oriental semi
ost50n65hmf.pdf

OST50N65KEW2F OST50N65KEW2F

OST50N65HMF Enhancement Mode N-Channel Power IGBT General Description OST50N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.2. Size:535K  oriental semi
ost50n65hf-d.pdf

OST50N65KEW2F OST50N65KEW2F

OST50N65HF-D Enhancement Mode N-Channel Power IGBT General Description OST50N65HF-D uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 6.3. Size:756K  oriental semi
ost50n65hewf.pdf

OST50N65KEW2F OST50N65KEW2F

 6.4. Size:755K  oriental semi
ost50n65h4ewf.pdf

OST50N65KEW2F OST50N65KEW2F

 6.5. Size:747K  oriental semi
ost50n65hszf.pdf

OST50N65KEW2F OST50N65KEW2F

OST50N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 6.6. Size:765K  oriental semi
ost50n65hm2f.pdf

OST50N65KEW2F OST50N65KEW2F

OST50N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST50N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 6.7. Size:752K  oriental semi
ost50n65hsnf.pdf

OST50N65KEW2F OST50N65KEW2F

OST50N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 6.8. Size:617K  oriental semi
ost50n65hzf.pdf

OST50N65KEW2F OST50N65KEW2F

OST50N65HZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.9. Size:698K  oriental semi
ost50n65hf.pdf

OST50N65KEW2F OST50N65KEW2F

OST50N65HF Enhancement Mode N-Channel Power IGBT General Description OST50N65HF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technology

 6.10. Size:745K  oriental semi
ost50n65hxf.pdf

OST50N65KEW2F OST50N65KEW2F

OST50N65HXF Enhancement Mode N-Channel Power IGBT General Description OST50N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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