All IGBT. OST50N65KEW2F Datasheet

 

OST50N65KEW2F IGBT. Datasheet pdf. Equivalent


   Type Designator: OST50N65KEW2F
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 41 nS
   Coesⓘ - Output Capacitance, typ: 276 pF
   Package: TO263

 OST50N65KEW2F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

OST50N65KEW2F Datasheet (PDF)

 ..1. Size:595K  oriental semi
ost50n65kew2f.pdf

OST50N65KEW2F OST50N65KEW2F

 6.1. Size:732K  oriental semi
ost50n65hmf.pdf

OST50N65KEW2F OST50N65KEW2F

OST50N65HMF Enhancement Mode N-Channel Power IGBT General Description OST50N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.2. Size:535K  oriental semi
ost50n65hf-d.pdf

OST50N65KEW2F OST50N65KEW2F

OST50N65HF-D Enhancement Mode N-Channel Power IGBT General Description OST50N65HF-D uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 6.3. Size:756K  oriental semi
ost50n65hewf.pdf

OST50N65KEW2F OST50N65KEW2F

 6.4. Size:755K  oriental semi
ost50n65h4ewf.pdf

OST50N65KEW2F OST50N65KEW2F

 6.5. Size:747K  oriental semi
ost50n65hszf.pdf

OST50N65KEW2F OST50N65KEW2F

OST50N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 6.6. Size:765K  oriental semi
ost50n65hm2f.pdf

OST50N65KEW2F OST50N65KEW2F

OST50N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST50N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 6.7. Size:752K  oriental semi
ost50n65hsnf.pdf

OST50N65KEW2F OST50N65KEW2F

OST50N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 6.8. Size:617K  oriental semi
ost50n65hzf.pdf

OST50N65KEW2F OST50N65KEW2F

OST50N65HZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.9. Size:698K  oriental semi
ost50n65hf.pdf

OST50N65KEW2F OST50N65KEW2F

OST50N65HF Enhancement Mode N-Channel Power IGBT General Description OST50N65HF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technology

 6.10. Size:745K  oriental semi
ost50n65hxf.pdf

OST50N65KEW2F OST50N65KEW2F

OST50N65HXF Enhancement Mode N-Channel Power IGBT General Description OST50N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

Datasheet: OST90N60HCZF , OST90N65HM2F , OSC80N65HF , OSC90N65HF , RJH3047 , GT30F123 , GT30J127 , OST50N65HEWF , RJP63F3DPP-M0 , OST60N65H4EMF , OST60N65H4EWF , OST75N65HSWF , OST80N65H4EWF , OST80N65HEWF , SGT10T60SD1S , SGT10T60SD1F , SGT10T60SDM1D .

 

 
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