OST80N65H4EWF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OST80N65H4EWF  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 395 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 114 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 163 nS

Coesⓘ - Capacitancia de salida, typ: 353 pF

Encapsulados: TO247-4L

  📄📄 Copiar 

 Búsqueda de reemplazo de OST80N65H4EWF IGBT

- Selecciónⓘ de transistores por parámetros

 

OST80N65H4EWF datasheet

 ..1. Size:884K  oriental semi
 ost80n65h4ewf.pdf pdf_icon

OST80N65H4EWF

 3.1. Size:804K  oriental semi
 ost80n65h4emf.pdf pdf_icon

OST80N65H4EWF

OST80N65H4EMF Enhancement Mode N-Channel Power IGBT General Description OST80N65H4EMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

 5.1. Size:831K  oriental semi
 ost80n65hevf.pdf pdf_icon

OST80N65H4EWF

OST80N65HEVF Enhancement Mode N-Channel Power IGBT General Description OST80N65HEVF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.2. Size:767K  oriental semi
 ost80n65hemf.pdf pdf_icon

OST80N65H4EWF

OST80N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST80N65HEMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

MOSTRAR MÁS

Otros transistores... RJH3047, GT30F123, GT30J127, OST50N65HEWF, OST50N65KEW2F, OST60N65H4EMF, OST60N65H4EWF, OST75N65HSWF, RJP30E2DPP-M0, OST80N65HEWF, SGT10T60SD1S, SGT10T60SD1F, SGT10T60SDM1D, SGT10T60SDM1P7, SGT15T60SD1T, SGT15T60SD1F, SGT15T60SD1STR