All IGBT. OST80N65H4EWF Datasheet

 

OST80N65H4EWF Datasheet and Replacement


   Type Designator: OST80N65H4EWF
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 395 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 114 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 163 nS
   Coesⓘ - Output Capacitance, typ: 353 pF
   Package: TO247-4L
 

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OST80N65H4EWF Datasheet (PDF)

 ..1. Size:884K  oriental semi
 ost80n65h4ewf.pdf pdf_icon

OST80N65H4EWF

 3.1. Size:804K  oriental semi
 ost80n65h4emf.pdf pdf_icon

OST80N65H4EWF

OST80N65H4EMF Enhancement Mode N-Channel Power IGBT General Description OST80N65H4EMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

 5.1. Size:831K  oriental semi
 ost80n65hevf.pdf pdf_icon

OST80N65H4EWF

OST80N65HEVF Enhancement Mode N-Channel Power IGBT General Description OST80N65HEVF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.2. Size:767K  oriental semi
 ost80n65hemf.pdf pdf_icon

OST80N65H4EWF

OST80N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST80N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

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Datasheet: RJH3047 , GT30F123 , GT30J127 , OST50N65HEWF , OST50N65KEW2F , OST60N65H4EMF , OST60N65H4EWF , OST75N65HSWF , RJP63F3DPP-M0 , OST80N65HEWF , SGT10T60SD1S , SGT10T60SD1F , SGT10T60SDM1D , SGT10T60SDM1P7 , SGT15T60SD1T , SGT15T60SD1F , SGT15T60SD1STR .

History: IRG4BC40S

Keywords - OST80N65H4EWF transistor datasheet

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