SGT10T60SDM1P7 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGT10T60SDM1P7
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 96 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 28 nS
Coesⓘ - Capacitancia de salida, typ: 35 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
SGT10T60SDM1P7 Datasheet (PDF)
sgt10t60sdm1p7.pdf
SGT10T60SDM1P7 10A600V C2SGT10T60SDM1P7 1Field StopIIIG UPSSMPS 3E 10A600VVCE(sat)()=1.65V@I
sgt10t60sdm1d.pdf
SGT10T60SDM1D 10A600V C2SGT10T60SDM1D Field StopIII 1G UPSSMPS 3E 10A600VVCE(sat)()=1.65V@IC=1
sgt10t60sd1s sgt10t60sd1str sgt10t60sd1f.pdf
SGT10T60SD1S/F 10A600V C2SGT10T60SD1S/F 1Field StopIIIG UPSSMPS PFC 3E 10A600VVCE(sat)()=1.65V@IC=10A
sgt10u60sdm2d.pdf
SGT10U60SDM2D 10A600V C2SGT10U60SDM2D 4 PlusField Stop IV+ 1G UPS,SMPS PFC 3E 10A600VVCE(sat)( )=1.65V@ IC=10A
Otros transistores... OST60N65H4EMF , OST60N65H4EWF , OST75N65HSWF , OST80N65H4EWF , OST80N65HEWF , SGT10T60SD1S , SGT10T60SD1F , SGT10T60SDM1D , RJH30E2DPP , SGT15T60SD1T , SGT15T60SD1F , SGT15T60SD1STR , SGT15U65SD1F , SGT15U65SD1FD , SGT20T135QR1P7 , SGT20T135QR1PN , SGT20T135QR1PT .
History: STGWA60NC60WDR | NGB8204N | TGAN60N65F2DS | HGTH12N40C1 | RJP60F4DPM | RJH60D5DPM
History: STGWA60NC60WDR | NGB8204N | TGAN60N65F2DS | HGTH12N40C1 | RJP60F4DPM | RJH60D5DPM
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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