SGT10T60SDM1P7 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGT10T60SDM1P7
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 96 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 28 nS
Coesⓘ - Capacitancia de salida, typ: 35 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de SGT10T60SDM1P7 IGBT
SGT10T60SDM1P7 datasheet
sgt10t60sdm1p7.pdf
SGT10T60SDM1P7 10A 600V C 2 SGT10T60SDM1P7 1 Field StopIII G UPS SMPS 3 E 10A 600V VCE(sat)( )=1.65V@I
sgt10t60sdm1d.pdf
SGT10T60SDM1D 10A 600V C 2 SGT10T60SDM1D Field StopIII 1 G UPS SMPS 3 E 10A 600V VCE(sat)( )=1.65V@IC=1
sgt10u60sdm2d.pdf
SGT10U60SDM2D 10A 600V C 2 SGT10U60SDM2D 4 Plus Field Stop IV+ 1 G UPS,SMPS PFC 3 E 10A 600V VCE(sat)( )=1.65V@ IC=10A
Otros transistores... OST60N65H4EMF , OST60N65H4EWF , OST75N65HSWF , OST80N65H4EWF , OST80N65HEWF , SGT10T60SD1S , SGT10T60SD1F , SGT10T60SDM1D , IKW75N60T , SGT15T60SD1T , SGT15T60SD1F , SGT15T60SD1STR , SGT15U65SD1F , SGT15U65SD1FD , SGT20T135QR1P7 , SGT20T135QR1PN , SGT20T135QR1PT .
History: SGT15U65SD1F | SGT15T60SD1T | OST75N65HSVF
History: SGT15U65SD1F | SGT15T60SD1T | OST75N65HSVF
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
irf640 | irf840 | irf740 | c945 transistor | irf640n | 2n3904 | bc547 datasheet | k3797 mosfet