SGT10T60SDM1P7 Specs and Replacement
Type Designator: SGT10T60SDM1P7
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 96 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
tr ⓘ - Rise Time, typ: 28 nS
Coesⓘ - Output Capacitance, typ: 35 pF
Package: TO247
SGT10T60SDM1P7 Substitution - IGBTⓘ Cross-Reference Search
SGT10T60SDM1P7 datasheet
sgt10t60sdm1p7.pdf
SGT10T60SDM1P7 10A 600V C 2 SGT10T60SDM1P7 1 Field StopIII G UPS SMPS 3 E 10A 600V VCE(sat)( )=1.65V@I... See More ⇒
sgt10t60sdm1d.pdf
SGT10T60SDM1D 10A 600V C 2 SGT10T60SDM1D Field StopIII 1 G UPS SMPS 3 E 10A 600V VCE(sat)( )=1.65V@IC=1... See More ⇒
sgt10u60sdm2d.pdf
SGT10U60SDM2D 10A 600V C 2 SGT10U60SDM2D 4 Plus Field Stop IV+ 1 G UPS,SMPS PFC 3 E 10A 600V VCE(sat)( )=1.65V@ IC=10A ... See More ⇒
Specs: OST60N65H4EMF, OST60N65H4EWF, OST75N65HSWF, OST80N65H4EWF, OST80N65HEWF, SGT10T60SD1S, SGT10T60SD1F, SGT10T60SDM1D, IKW75N60T, SGT15T60SD1T, SGT15T60SD1F, SGT15T60SD1STR, SGT15U65SD1F, SGT15U65SD1FD, SGT20T135QR1P7, SGT20T135QR1PN, SGT20T135QR1PT
Keywords - SGT10T60SDM1P7 transistor spec
SGT10T60SDM1P7 cross reference
SGT10T60SDM1P7 equivalent finder
SGT10T60SDM1P7 lookup
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SGT10T60SDM1P7 replacement
History: LEGM75BF120L5H
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