SGT20T135QR1PN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGT20T135QR1PN
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1350 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 50 nS
Coesⓘ - Capacitancia de salida, typ: 55 pF
Paquete / Cubierta: TO3P
- Selección de transistores por parámetros
SGT20T135QR1PN Datasheet (PDF)
sgt20t135qr1p7 sgt20t135qr1pn sgt20t135qr1pt.pdf
SGT20T135QR1P7(PN)(PT) 20A1350V C 2SGT20T135QR1P7/PN/PT 1Reverse ConductingG
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SGT20T60SD1F(S)(P7)(FD)(PN) 20A600V C 21SGT20T60SD1F(S)(P7)(FD)(PN)(T)GField Stop III1 UPSSMPS PFC 323TO-3PE 13
sgt20t60sdm1p7.pdf
SGT20T60SDM1P7 20600V C2SGT20T60SDM1P7 Field Stop1G UPSSMPS PFC 3E 20A600VVCE(sat)( )=1.7V@IC=20A
Otros transistores... SGT10T60SDM1D , SGT10T60SDM1P7 , SGT15T60SD1T , SGT15T60SD1F , SGT15T60SD1STR , SGT15U65SD1F , SGT15U65SD1FD , SGT20T135QR1P7 , CRG60T60AN3H , SGT20T135QR1PT , SGT20T60SD1F , SGT20T60SD1S , SGT20T60SD1P7 , SGT20T60SD1FD , SGT20T60SD1PN , SGT20T60SD1T , SGT30T60SDM1P7 .
History: MMIX1X100N60B3H1 | SGT20T60SD1S | SMC7G30US60 | IRGIB7B60KD | OST40N65PMF | NGTB50N60FWG | GPU75HF120D1
History: MMIX1X100N60B3H1 | SGT20T60SD1S | SMC7G30US60 | IRGIB7B60KD | OST40N65PMF | NGTB50N60FWG | GPU75HF120D1
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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