SGT20T135QR1PN IGBT. Datasheet pdf. Equivalent
Type Designator: SGT20T135QR1PN
Type: IGBT + Anti-Parallel Diode
Marking Code: 20T135QR
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 55 pF
Qgⓘ - Total Gate Charge, typ: 125 nC
Package: TO3P
SGT20T135QR1PN Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGT20T135QR1PN Datasheet (PDF)
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