SGT20T135QR1PN Specs and Replacement
Type Designator: SGT20T135QR1PN
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 55 pF
Package: TO3P
SGT20T135QR1PN Substitution - IGBTⓘ Cross-Reference Search
SGT20T135QR1PN datasheet
sgt20t60sd1f sgt20t60sd1s sgt20t60sd1str sgt20t60sd1p7 sgt20t60sd1fd sgt20t60sd1pn sgt20t60sd1t.pdf
SGT20T60SD1F(S)(P7)(FD)(PN) 20A 600V C 2 1 SGT20T60SD1F(S)(P7)(FD)(PN)(T) G Field Stop III 1 UPS SMPS PFC 3 2 3 TO-3P E 1 3 ... See More ⇒
sgt20t60sdm1p7.pdf
SGT20T60SDM1P7 20 600V C 2 SGT20T60SDM1P7 Field Stop 1 G UPS SMPS PFC 3 E 20A 600V VCE(sat)( )=1.7V@IC=20A ... See More ⇒
Specs: SGT10T60SDM1D, SGT10T60SDM1P7, SGT15T60SD1T, SGT15T60SD1F, SGT15T60SD1STR, SGT15U65SD1F, SGT15U65SD1FD, SGT20T135QR1P7, SGT40N60FD2PN, SGT20T135QR1PT, SGT20T60SD1F, SGT20T60SD1S, SGT20T60SD1P7, SGT20T60SD1FD, SGT20T60SD1PN, SGT20T60SD1T, SGT30T60SDM1P7
Keywords - SGT20T135QR1PN transistor spec
SGT20T135QR1PN cross reference
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History: SGT15U65SD1FD
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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