SGT30T60SDM1P7 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGT30T60SDM1P7
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 278 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 105 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
SGT30T60SDM1P7 Datasheet (PDF)
sgt30t60sdm1p7.pdf
SGT30T60SDM1P7 30A600V C2SGT30T60SDM1P7 Field Stop III 1G UPSSMPS PFC 3E 30A600VVCE sat=1.65V@IC=30
sgt30t60sd3pu.pdf
SGT30T60SD3PU 30A600V C2SGT30T60SD3PU 1Field Stop IIIG UPSSMPS PFC 3E 30A600VVCE(sat)( )=1.65V@IC=30A
Otros transistores... SGT20T135QR1PN , SGT20T135QR1PT , SGT20T60SD1F , SGT20T60SD1S , SGT20T60SD1P7 , SGT20T60SD1FD , SGT20T60SD1PN , SGT20T60SD1T , YGW40N65F1 , SGT30T60SD3PU , SGT40N60F2P7 , SGT40N60FD1P7 , SGT40N60FD2PT , SGT40T120SDB4P7 , SGT40U120FD1P7 , SGT50T65SDM1P7 , SGT60N60FD1PS .
History: APT30GT60BRD | STGP19NC60HD | IXBF50N360 | APTGF50DH60T | TGAN20N135F3D | NGTB50N65FL2 | APTGF180DA60T
History: APT30GT60BRD | STGP19NC60HD | IXBF50N360 | APTGF50DH60T | TGAN20N135F3D | NGTB50N65FL2 | APTGF180DA60T
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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