All IGBT. SGT30T60SDM1P7 Datasheet

 

SGT30T60SDM1P7 IGBT. Datasheet pdf. Equivalent


   Type Designator: SGT30T60SDM1P7
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 30T60SDM1
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 278
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 60
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 105
   Collector Capacity (Cc), typ, pF: 130
   Total Gate Charge (Qg), typ, nC: 76
   Package: TO247

 SGT30T60SDM1P7 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGT30T60SDM1P7 Datasheet (PDF)

 ..1. Size:363K  silan
 sgt30t60sdm1p7.pdf

SGT30T60SDM1P7 SGT30T60SDM1P7

SGT30T60SDM1P7 30A600V C2SGT30T60SDM1P7 Field Stop III 1G UPSSMPS PFC 3E 30A600VVCE sat=1.65V@IC=30

 4.1. Size:340K  silan
 sgt30t60sd3pu.pdf

SGT30T60SDM1P7 SGT30T60SDM1P7

SGT30T60SD3PU 30A600V C2SGT30T60SD3PU 1Field Stop IIIG UPSSMPS PFC 3E 30A600VVCE(sat)( )=1.65V@IC=30A

Datasheet: SGT20T135QR1PN , SGT20T135QR1PT , SGT20T60SD1F , SGT20T60SD1S , SGT20T60SD1P7 , SGT20T60SD1FD , SGT20T60SD1PN , SGT20T60SD1T , TGD30N40P , SGT30T60SD3PU , SGT40N60F2P7 , SGT40N60FD1P7 , SGT40N60FD2PT , SGT40T120SDB4P7 , SGT40U120FD1P7 , SGT50T65SDM1P7 , SGT60N60FD1PS .

 

 
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