All IGBT. SGT30T60SDM1P7 Datasheet

 

SGT30T60SDM1P7 Datasheet and Replacement


   Type Designator: SGT30T60SDM1P7
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 30T60SDM1
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 278 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 105 nS
   Coesⓘ - Output Capacitance, typ: 130 pF
   Qg ⓘ - Total Gate Charge, typ: 76 nC
   Package: TO247
 

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SGT30T60SDM1P7 Datasheet (PDF)

 ..1. Size:363K  silan
 sgt30t60sdm1p7.pdf pdf_icon

SGT30T60SDM1P7

SGT30T60SDM1P7 30A600V C2SGT30T60SDM1P7 Field Stop III 1G UPSSMPS PFC 3E 30A600VVCE sat=1.65V@IC=30

 4.1. Size:340K  silan
 sgt30t60sd3pu.pdf pdf_icon

SGT30T60SDM1P7

SGT30T60SD3PU 30A600V C2SGT30T60SD3PU 1Field Stop IIIG UPSSMPS PFC 3E 30A600VVCE(sat)( )=1.65V@IC=30A

Datasheet: SGT20T135QR1PN , SGT20T135QR1PT , SGT20T60SD1F , SGT20T60SD1S , SGT20T60SD1P7 , SGT20T60SD1FD , SGT20T60SD1PN , SGT20T60SD1T , NGD8201N , SGT30T60SD3PU , SGT40N60F2P7 , SGT40N60FD1P7 , SGT40N60FD2PT , SGT40T120SDB4P7 , SGT40U120FD1P7 , SGT50T65SDM1P7 , SGT60N60FD1PS .

History: NCE25TD120LP

Keywords - SGT30T60SDM1P7 transistor datasheet

 SGT30T60SDM1P7 cross reference
 SGT30T60SDM1P7 equivalent finder
 SGT30T60SDM1P7 lookup
 SGT30T60SDM1P7 substitution
 SGT30T60SDM1P7 replacement

 

 
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