SGT30T60SDM1P7 Specs and Replacement
Type Designator: SGT30T60SDM1P7
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 278 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
tr ⓘ - Rise Time, typ: 105 nS
Coesⓘ - Output Capacitance, typ: 130 pF
Package: TO247
SGT30T60SDM1P7 Substitution - IGBTⓘ Cross-Reference Search
SGT30T60SDM1P7 datasheet
sgt30t60sdm1p7.pdf
SGT30T60SDM1P7 30A 600V C 2 SGT30T60SDM1P7 Field Stop III 1 G UPS SMPS PFC 3 E 30A 600V VCE sat =1.65V@IC=30... See More ⇒
sgt30t60sd3pu.pdf
SGT30T60SD3PU 30A 600V C 2 SGT30T60SD3PU 1 Field Stop III G UPS SMPS PFC 3 E 30A 600V VCE(sat)( )=1.65V@IC=30A ... See More ⇒
Specs: SGT20T135QR1PN, SGT20T135QR1PT, SGT20T60SD1F, SGT20T60SD1S, SGT20T60SD1P7, SGT20T60SD1FD, SGT20T60SD1PN, SGT20T60SD1T, NGD8201N, SGT30T60SD3PU, SGT40N60F2P7, SGT40N60FD1P7, SGT40N60FD2PT, SGT40T120SDB4P7, SGT40U120FD1P7, SGT50T65SDM1P7, SGT60N60FD1PS
Keywords - SGT30T60SDM1P7 transistor spec
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SGT30T60SDM1P7 replacement
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