SGT40N60FD2PT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGT40N60FD2PT
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 380 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 88 nS
Coesⓘ - Capacitancia de salida, typ: 190 pF
Paquete / Cubierta: TO3PN
- Selección de transistores por parámetros
SGT40N60FD2PT Datasheet (PDF)
sgt40n60fd2pn sgt40n60fd2p7 sgt40n60fd2pt.pdf
SGT40N60FD2PN(P7)(PT) 40A, 600V C2 SGT40N60FD2PN(P7)(PT) 112G3 Field Stop III TO-247-3L SMPS UPS
sgt40n60fd2pn sgt40n60fd2p7.pdf
SGT40N60FD2PN(P7) 40A, 600V SGT40N60FD2PN(P7) Field Stop III UPSSMPS PFC 40A, 600V, VCE(sat) =1.
sgt40n60fd1p7.pdf
SGT40N60FD1P7 40A, 600V C 2SGT40N60FD1P7 1G UPSSMPS PFC 3E 40A, 600V, VCE(sat) =1.8V@IC=40A
sgt40n60f2p7.pdf
SGT40N60F2P7 40A, 600V C2SGT40N60F2P7 1Field Stop IIG UPSSMPS PFC 3E 4
Otros transistores... SGT20T60SD1P7 , SGT20T60SD1FD , SGT20T60SD1PN , SGT20T60SD1T , SGT30T60SDM1P7 , SGT30T60SD3PU , SGT40N60F2P7 , SGT40N60FD1P7 , GT30F131 , SGT40T120SDB4P7 , SGT40U120FD1P7 , SGT50T65SDM1P7 , SGT60N60FD1PS , SGT60N60FD1PT , SGT60U65FD1P7 , SGT70N65FD1P7 , SGT70N65FDM1P7 .
History: APT65GP60B2G | IXBF42N300 | STGW15H120DF2 | FGH40T100SMD | MM40G120L | IXBF50N360 | 2MBI600VE-120-50
History: APT65GP60B2G | IXBF42N300 | STGW15H120DF2 | FGH40T100SMD | MM40G120L | IXBF50N360 | 2MBI600VE-120-50
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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