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SGT40N60FD2PT Specs and Replacement


   Type Designator: SGT40N60FD2PT
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 380 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 88 nS
   Coesⓘ - Output Capacitance, typ: 190 pF
   Package: TO3PN
 

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SGT40N60FD2PT specs

 ..1. Size:320K  silan
 sgt40n60fd2pn sgt40n60fd2p7 sgt40n60fd2pt.pdf pdf_icon

SGT40N60FD2PT

SGT40N60FD2PN(P7)(PT) 40A, 600V C 2 SGT40N60FD2PN(P7)(PT) 1 1 2 G 3 Field Stop III TO-247-3L SMPS UPS ... See More ⇒

 2.1. Size:362K  silan
 sgt40n60fd2pn sgt40n60fd2p7.pdf pdf_icon

SGT40N60FD2PT

SGT40N60FD2PN(P7) 40A, 600V SGT40N60FD2PN(P7) Field Stop III UPS SMPS PFC 40A, 600V, VCE(sat) =1.... See More ⇒

 4.1. Size:260K  silan
 sgt40n60fd1p7.pdf pdf_icon

SGT40N60FD2PT

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 5.1. Size:273K  silan
 sgt40n60f2p7.pdf pdf_icon

SGT40N60FD2PT

SGT40N60F2P7 40A, 600V C 2 SGT40N60F2P7 1 Field Stop II G UPS SMPS PFC 3 E 4... See More ⇒

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Specs: SGT20T60SD1P7 , SGT20T60SD1FD , SGT20T60SD1PN , SGT20T60SD1T , SGT30T60SDM1P7 , SGT30T60SD3PU , SGT40N60F2P7 , SGT40N60FD1P7 , GT45F122 , SGT40T120SDB4P7 , SGT40U120FD1P7 , SGT50T65SDM1P7 , SGT60N60FD1PS , SGT60N60FD1PT , SGT60U65FD1P7 , SGT70N65FD1P7 , SGT70N65FDM1P7 .

Keywords - SGT40N60FD2PT transistor spec

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