SGT40N60FD2PT Datasheet. Specs and Replacement

Type Designator: SGT40N60FD2PT  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 380 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 88 nS

Coesⓘ - Output Capacitance, typ: 190 pF

Package: TO3PN

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SGT40N60FD2PT datasheet

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SGT40N60FD2PT

SGT40N60FD2PN(P7)(PT) 40A, 600V C 2 SGT40N60FD2PN(P7)(PT) 1 1 2 G 3 Field Stop III TO-247-3L SMPS UPS ... See More ⇒

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SGT40N60FD2PT

SGT40N60FD2PN(P7) 40A, 600V SGT40N60FD2PN(P7) Field Stop III UPS SMPS PFC 40A, 600V, VCE(sat) =1.... See More ⇒

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SGT40N60FD2PT

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SGT40N60FD2PT

SGT40N60F2P7 40A, 600V C 2 SGT40N60F2P7 1 Field Stop II G UPS SMPS PFC 3 E 4... See More ⇒

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Specs: SGT20T60SD1P7, SGT20T60SD1FD, SGT20T60SD1PN, SGT20T60SD1T, SGT30T60SDM1P7, SGT30T60SD3PU, SGT40N60F2P7, SGT40N60FD1P7, GT45F122, SGT40T120SDB4P7, SGT40U120FD1P7, SGT50T65SDM1P7, SGT60N60FD1PS, SGT60N60FD1PT, SGT60U65FD1P7, SGT70N65FD1P7, SGT70N65FDM1P7

Keywords - SGT40N60FD2PT transistor spec

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