SGTP5T60SD1DTR - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGTP5T60SD1DTR
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 82 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 14 nS
Coesⓘ - Capacitancia de salida, typ: 26 pF
Paquete / Cubierta: TO252
- Selección de transistores por parámetros
SGTP5T60SD1DTR Datasheet (PDF)
sgtp5t60sd1dtr sgtp5t60sd1f sgtp5t60sd1s sgtp5t60sd1str.pdf

SGTP5T60SD1D(F)(S) 5A600V C 2SGTP5T60SD1D/F/S 1G1Field Stop3 UPSSMPS PFC TO-252-2L3E 5A600VVCE(sat)( )=1.5V@IC=
sgtp5t60sd1d sgtp5t60sd1f sgtp5t60sd1s.pdf

SGTP5T60SD1D/F/S 5A600V C 2SGTP5T60SD1D/F/S 1G1Field Stop3 UPSSMPS PFC TO-252-2L3E 5A600VVCE(sat)( )=1.5V@IC=5
sgtp50t120fdb4pwa.pdf

SGTP50T120FDB4PWA 50A1200V C 2SGTP50T120FDB4PWA 1GField Stop IVUPSSMPS PFC 3 E 50A1200VVCE(sat)( )=2.0V@IC=50A
sgtp50v65sdb1p7.pdf

SGTP50V65SDB1P7 50A650V C 2SGTP50V65SDB1P7 1GField Stop 5UPSSMPS PFC 3E 50A650VVCE(sat)( )=1.45V@IC=50A
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: MMIX1X200N60B3 | CM75DY-28H | FGB7N60UNDF | RGT8BM65D | CM300DY-24H | IXGH48N60A3
History: MMIX1X200N60B3 | CM75DY-28H | FGB7N60UNDF | RGT8BM65D | CM300DY-24H | IXGH48N60A3



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