SGTP5T60SD1DTR Specs and Replacement
Type Designator: SGTP5T60SD1DTR
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 82 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 10 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
tr ⓘ - Rise Time, typ: 14 nS
Coesⓘ - Output Capacitance, typ: 26 pF
Package: TO252
SGTP5T60SD1DTR Substitution - IGBT ⓘ Cross-Reference Search
SGTP5T60SD1DTR datasheet
sgtp5t60sd1dtr sgtp5t60sd1f sgtp5t60sd1s sgtp5t60sd1str.pdf
SGTP5T60SD1D(F)(S) 5A 600V C 2 SGTP5T60SD1D/F/S 1 G 1 Field Stop 3 UPS SMPS PFC TO-252-2L 3 E 5A 600V VCE(sat)( )=1.5V@IC=... See More ⇒
sgtp5t60sd1d sgtp5t60sd1f sgtp5t60sd1s.pdf
SGTP5T60SD1D/F/S 5A 600V C 2 SGTP5T60SD1D/F/S 1 G 1 Field Stop 3 UPS SMPS PFC TO-252-2L 3 E 5A 600V VCE(sat)( )=1.5V@IC=5... See More ⇒
sgtp50t120fdb4pwa.pdf
SGTP50T120FDB4PWA 50A 1200V C 2 SGTP50T120FDB4PWA 1 G Field Stop IV UPS SMPS PFC 3 E 50A 1200V VCE(sat)( )=2.0V@IC=50A ... See More ⇒
Specs: SGTP50V60FD2PF , SGTP50V60FD2PU , SGTP50V60SD2PF , SGTP50V65FD2PU , SGTP50V65FDB1P7 , SGTP50V65SDB1P7 , SGTP50V65UF1P7 , SGTP50V65UFCR3P7 , RJH60F5DPQ-A0 , SGTP5T60SD1STR , SGTP75V120FDB2PW , SGTP75V120FDB2PW4 , SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW .
Keywords - SGTP5T60SD1DTR transistor spec
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