SGTP75V120FDB2PW4 Todos los transistores

 

SGTP75V120FDB2PW4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGTP75V120FDB2PW4
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 833 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 31 nS
   Coesⓘ - Capacitancia de salida, typ: 175 pF
   Paquete / Cubierta: TO247P-4L
     - Selección de transistores por parámetros

 

SGTP75V120FDB2PW4 Datasheet (PDF)

 0.1. Size:537K  silan
 sgtp75v120fdb2pw4.pdf pdf_icon

SGTP75V120FDB2PW4

SGTP75V120FDB2PW4 75A1200V C1SGTP75V120FDB2PW4 4Field Stop 5GUPSSMPS PFC 3 2E 75A1200VVCE(sat)( )=1.9V@IC=

 0.2. Size:483K  silan
 sgtp75v120fdb2pw.pdf pdf_icon

SGTP75V120FDB2PW4

SGTP75V120FDB2PW 75A1200V C 2SGTP75V120FDB2PW 1GField Stop 5UPSSMPS PFC 3 E 75A1200VVCE(sat)( )=1.9V@IC=75A

 7.1. Size:477K  silan
 sgtp75v65fdb1p7.pdf pdf_icon

SGTP75V120FDB2PW4

SGTP75V65FDB1P7 75A650V C 2SGTP75V65FDB1P7 1GField Stop 5UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.65V@IC=75A

 7.2. Size:562K  silan
 sgtp75v65sds1p7.pdf pdf_icon

SGTP75V120FDB2PW4

SGTP75V65SDS1P7 75A650V C 2SGTP75V65SDS1P7 1GField Stop 5UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.42V@IC=75A

MOSTRAR MÁS

Otros transistores... SGTP50V65FD2PU , SGTP50V65FDB1P7 , SGTP50V65SDB1P7 , SGTP50V65UF1P7 , SGTP50V65UFCR3P7 , SGTP5T60SD1DTR , SGTP5T60SD1STR , SGTP75V120FDB2PW , IXRH40N120 , SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD .

History: CM200DU-24F | IXBF50N360 | FGH40T100SMD

 

 
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