SGTP75V120FDB2PW4 Datasheet and Replacement
Type Designator: SGTP75V120FDB2PW4
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 833 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 31 nS
Coesⓘ - Output Capacitance, typ: 175 pF
Package: TO247P-4L
- IGBT Cross-Reference
SGTP75V120FDB2PW4 Datasheet (PDF)
sgtp75v120fdb2pw4.pdf

SGTP75V120FDB2PW4 75A1200V C1SGTP75V120FDB2PW4 4Field Stop 5GUPSSMPS PFC 3 2E 75A1200VVCE(sat)( )=1.9V@IC=
sgtp75v120fdb2pw.pdf

SGTP75V120FDB2PW 75A1200V C 2SGTP75V120FDB2PW 1GField Stop 5UPSSMPS PFC 3 E 75A1200VVCE(sat)( )=1.9V@IC=75A
sgtp75v65fdb1p7.pdf

SGTP75V65FDB1P7 75A650V C 2SGTP75V65FDB1P7 1GField Stop 5UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.65V@IC=75A
sgtp75v65sds1p7.pdf

SGTP75V65SDS1P7 75A650V C 2SGTP75V65SDS1P7 1GField Stop 5UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.42V@IC=75A
Datasheet: SGTP50V65FD2PU , SGTP50V65FDB1P7 , SGTP50V65SDB1P7 , SGTP50V65UF1P7 , SGTP50V65UFCR3P7 , SGTP5T60SD1DTR , SGTP5T60SD1STR , SGTP75V120FDB2PW , IXRH40N120 , SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD .
History: IXYH75N65C3 | SKM150GB173D | RJP60V0DPM | GT10G101 | MG300N1US1 | SGT30T60SD3PU | STGP6NC60HD
Keywords - SGTP75V120FDB2PW4 transistor datasheet
SGTP75V120FDB2PW4 cross reference
SGTP75V120FDB2PW4 equivalent finder
SGTP75V120FDB2PW4 lookup
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SGTP75V120FDB2PW4 replacement
History: IXYH75N65C3 | SKM150GB173D | RJP60V0DPM | GT10G101 | MG300N1US1 | SGT30T60SD3PU | STGP6NC60HD



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