SGTP75V65SDS1P7 Todos los transistores

 

SGTP75V65SDS1P7 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGTP75V65SDS1P7
   Tipo de transistor: IGBT + Diode
   Código de marcado: P75V65SDS1
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 395 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.42 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 63 nS
   Coesⓘ - Capacitancia de salida, typ: 182 pF
   Qgⓘ - Carga total de la puerta, typ: 181 nC
   Paquete / Cubierta: TO247

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SGTP75V65SDS1P7 Datasheet (PDF)

 0.1. Size:562K  silan
sgtp75v65sds1p7.pdf

SGTP75V65SDS1P7 SGTP75V65SDS1P7

SGTP75V65SDS1P7 75A650V C 2SGTP75V65SDS1P7 1GField Stop 5UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.42V@IC=75A

 3.1. Size:461K  silan
sgtp75v65sdb1p7.pdf

SGTP75V65SDS1P7 SGTP75V65SDS1P7

SGTP75V65SDB1P7 75A650V C 2SGTP75V65SDB1P7 1GField Stop 5UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.42V@IC=75A

 5.1. Size:477K  silan
sgtp75v65fdb1p7.pdf

SGTP75V65SDS1P7 SGTP75V65SDS1P7

SGTP75V65FDB1P7 75A650V C 2SGTP75V65FDB1P7 1GField Stop 5UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.65V@IC=75A

 5.2. Size:455K  silan
sgtp75v65fdb1p4b.pdf

SGTP75V65SDS1P7 SGTP75V65SDS1P7

SGTP75V65FDB1P4B 75A650V C1SGTP75V65FDB1P4B Field Stop 5 4GUPSSMPS PFC 3 2E 75A650VVCE(sat)( )=1.65V@IC=75A

Otros transistores... SGTP50V65UFCR3P7 , SGTP5T60SD1DTR , SGTP5T60SD1STR , SGTP75V120FDB2PW , SGTP75V120FDB2PW4 , SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , RJP6065DPM , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD , SGTQ30NE40I1DTR , SGTQ40T120SDB2P7 , SGT10U60SDM2D , BGF15T65SD .

 

 
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