SGTP75V65SDS1P7 IGBT. Datasheet pdf. Equivalent
Type Designator: SGTP75V65SDS1P7
Type: IGBT + Anti-Parallel Diode
Marking Code: P75V65SDS1
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 395 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.42 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 63 nS
Coesⓘ - Output Capacitance, typ: 182 pF
Qgⓘ - Total Gate Charge, typ: 181 nC
Package: TO247
SGTP75V65SDS1P7 Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGTP75V65SDS1P7 Datasheet (PDF)
sgtp75v65sds1p7.pdf
SGTP75V65SDS1P7 75A650V C 2SGTP75V65SDS1P7 1GField Stop 5UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.42V@IC=75A
sgtp75v65sdb1p7.pdf
SGTP75V65SDB1P7 75A650V C 2SGTP75V65SDB1P7 1GField Stop 5UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.42V@IC=75A
sgtp75v65fdb1p7.pdf
SGTP75V65FDB1P7 75A650V C 2SGTP75V65FDB1P7 1GField Stop 5UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.65V@IC=75A
sgtp75v65fdb1p4b.pdf
SGTP75V65FDB1P4B 75A650V C1SGTP75V65FDB1P4B Field Stop 5 4GUPSSMPS PFC 3 2E 75A650VVCE(sat)( )=1.65V@IC=75A
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2