SGT10U60SDM2D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGT10U60SDM2D
Tipo de transistor: IGBT + Diode
Código de marcado: 10U60SD2
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 48 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 18 nS
Coesⓘ - Capacitancia de salida, typ: 22 pF
Qgⓘ - Carga total de la puerta, typ: 49 nC
Paquete / Cubierta: TO252
Búsqueda de reemplazo de SGT10U60SDM2D IGBT
SGT10U60SDM2D Datasheet (PDF)
sgt10u60sdm2d.pdf
SGT10U60SDM2D 10A600V C2SGT10U60SDM2D 4 PlusField Stop IV+ 1G UPS,SMPS PFC 3E 10A600VVCE(sat)( )=1.65V@ IC=10A
sgt10t60sd1s sgt10t60sd1str sgt10t60sd1f.pdf
SGT10T60SD1S/F 10A600V C2SGT10T60SD1S/F 1Field StopIIIG UPSSMPS PFC 3E 10A600VVCE(sat)()=1.65V@IC=10A
sgt10t60sdm1p7.pdf
SGT10T60SDM1P7 10A600V C2SGT10T60SDM1P7 1Field StopIIIG UPSSMPS 3E 10A600VVCE(sat)()=1.65V@I
sgt10t60sdm1d.pdf
SGT10T60SDM1D 10A600V C2SGT10T60SDM1D Field StopIII 1G UPSSMPS 3E 10A600VVCE(sat)()=1.65V@IC=1
Otros transistores... SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD , SGTQ30NE40I1DTR , SGTQ40T120SDB2P7 , NGTB75N65FL2 , BGF15T65SD , SL15T65FF , SL15T65F , SL15T65FK , SL20T65F , SL20T65 , SL20T65FZ , SL20T65FL .
History: MMG100S060B6R | DG40X12T2 | 7MBR50VZ120-50 | MG200HF12MRC2 | IGC99T120T6RL | F4-50R12KS4 | SGW13N60UFD
History: MMG100S060B6R | DG40X12T2 | 7MBR50VZ120-50 | MG200HF12MRC2 | IGC99T120T6RL | F4-50R12KS4 | SGW13N60UFD
Liste
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