SGT10U60SDM2D IGBT. Datasheet pdf. Equivalent
Type Designator: SGT10U60SDM2D
Type: IGBT + Anti-Parallel Diode
Marking Code: 10U60SD2
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 48
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 20
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 18
Collector Capacity (Cc), typ, pF: 22
Total Gate Charge (Qg), typ, nC: 49
Package: TO252
SGT10U60SDM2D Transistor Equivalent Substitute - IGBT Cross-Reference Search
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