SGT10U60SDM2D Datasheet. Specs and Replacement

Type Designator: SGT10U60SDM2D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 48 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 18 nS

Coesⓘ - Output Capacitance, typ: 22 pF

Package: TO252

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SGT10U60SDM2D datasheet

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SGT10U60SDM2D

SGT10U60SDM2D 10A 600V C 2 SGT10U60SDM2D 4 Plus Field Stop IV+ 1 G UPS,SMPS PFC 3 E 10A 600V VCE(sat)( )=1.65V@ IC=10A ... See More ⇒

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SGT10U60SDM2D

SGT10T60SDM1P7 10A 600V C 2 SGT10T60SDM1P7 1 Field StopIII G UPS SMPS 3 E 10A 600V VCE(sat)( )=1.65V@I... See More ⇒

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SGT10U60SDM2D

SGT10T60SDM1D 10A 600V C 2 SGT10T60SDM1D Field StopIII 1 G UPS SMPS 3 E 10A 600V VCE(sat)( )=1.65V@IC=1... See More ⇒

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Specs: SGTP75V65SDB1P7, SGTP75V65SDS1P7, SGTQ160V65SDB1APW, SGTQ160V65SDB1APWA, SGTQ200V75SDB1PWA, SGTQ200V75SDB1PWD, SGTQ30NE40I1DTR, SGTQ40T120SDB2P7, IRG4PC40W, BGF15T65SD, SL15T65FF, SL15T65F, SL15T65FK, SL20T65F, SL20T65, SL20T65FZ, SL20T65FL

Keywords - SGT10U60SDM2D transistor spec

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