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SGT10U60SDM2D Specs and Replacement


   Type Designator: SGT10U60SDM2D
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 48 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 18 nS
   Coesⓘ - Output Capacitance, typ: 22 pF
   Package: TO252
 

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SGT10U60SDM2D specs

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 sgt10u60sdm2d.pdf pdf_icon

SGT10U60SDM2D

SGT10U60SDM2D 10A 600V C 2 SGT10U60SDM2D 4 Plus Field Stop IV+ 1 G UPS,SMPS PFC 3 E 10A 600V VCE(sat)( )=1.65V@ IC=10A ... See More ⇒

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 sgt10t60sd1s sgt10t60sd1str sgt10t60sd1f.pdf pdf_icon

SGT10U60SDM2D

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 sgt10t60sdm1p7.pdf pdf_icon

SGT10U60SDM2D

SGT10T60SDM1P7 10A 600V C 2 SGT10T60SDM1P7 1 Field StopIII G UPS SMPS 3 E 10A 600V VCE(sat)( )=1.65V@I... See More ⇒

 9.3. Size:316K  silan
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SGT10U60SDM2D

SGT10T60SDM1D 10A 600V C 2 SGT10T60SDM1D Field StopIII 1 G UPS SMPS 3 E 10A 600V VCE(sat)( )=1.65V@IC=1... See More ⇒

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Specs: SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD , SGTQ30NE40I1DTR , SGTQ40T120SDB2P7 , IRG4PC40W , BGF15T65SD , SL15T65FF , SL15T65F , SL15T65FK , SL20T65F , SL20T65 , SL20T65FZ , SL20T65FL .

Keywords - SGT10U60SDM2D transistor spec

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