SGT10U60SDM2D IGBT. Datasheet pdf. Equivalent
Type Designator: SGT10U60SDM2D
Type: IGBT + Anti-Parallel Diode
Marking Code: 10U60SD2
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 48 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 18 nS
Coesⓘ - Output Capacitance, typ: 22 pF
Qgⓘ - Total Gate Charge, typ: 49 nC
Package: TO252
SGT10U60SDM2D Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGT10U60SDM2D Datasheet (PDF)
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