KDG20N120H2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KDG20N120H2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 192 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 50 nS
Coesⓘ - Capacitancia de salida, typ: 135 pF
Paquete / Cubierta: TO247
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KDG20N120H2 Datasheet (PDF)
kdg20n120h2.pdf

KDG20N120H2 KDG20N120H2 Typical Performance Characteristics Figure1:maximum DC collector current Figure2:power dissipation VS. case temprature VS. case temprature Figure3:forward SOA,TC=25,TJ150 Figure4:reverse bias SOA,TJ=150,VGE=15V www.kedasemi.com - 3 - Rev1.1 November. 2011 Total 9 Pages KDG20N120H2 KDG20N120H2 Figure5:typical IGBT output characteristics
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: AOD6B65MQ1E | SKM300GB174D | SRE30N065FSSDG | APT35GA90SD15 | IXGH72N60B3 | NGTB40N60FLWG | VS-GB100NH120N
History: AOD6B65MQ1E | SKM300GB174D | SRE30N065FSSDG | APT35GA90SD15 | IXGH72N60B3 | NGTB40N60FLWG | VS-GB100NH120N



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