All IGBT. KDG20N120H2 Datasheet

 

KDG20N120H2 IGBT. Datasheet pdf. Equivalent


   Type Designator: KDG20N120H2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 192 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 135 pF
   Qgⓘ - Total Gate Charge, typ: 120 nC
   Package: TO247

 KDG20N120H2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

KDG20N120H2 Datasheet (PDF)

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 kdg20n120h2.pdf

KDG20N120H2 KDG20N120H2

KDG20N120H2 KDG20N120H2 Typical Performance Characteristics Figure1:maximum DC collector current Figure2:power dissipation VS. case temprature VS. case temprature Figure3:forward SOA,TC=25,TJ150 Figure4:reverse bias SOA,TJ=150,VGE=15V www.kedasemi.com - 3 - Rev1.1 November. 2011 Total 9 Pages KDG20N120H2 KDG20N120H2 Figure5:typical IGBT output characteristics

Datasheet: SIP30N60G21B , SIW30N60G21B , SIB30N60G21B , SIF30N65G21F , SIP30N65G21F , SIW30N65G21F , SIB30N65G21F , GT40T321 , SGT50T65FD1PT , SKT030N065 , ATT030N065EQ , ATT040K065EQ , ATT040N120EQ , ATT050K065FQC , ATT060U060EQ , ATT075N065EQ , JT010N065SED .

 

 
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