KDG20N120H2 Datasheet and Replacement
Type Designator: KDG20N120H2
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 192 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 135 pF
Package: TO247
- IGBT Cross-Reference
KDG20N120H2 Datasheet (PDF)
kdg20n120h2.pdf

KDG20N120H2 KDG20N120H2 Typical Performance Characteristics Figure1:maximum DC collector current Figure2:power dissipation VS. case temprature VS. case temprature Figure3:forward SOA,TC=25,TJ150 Figure4:reverse bias SOA,TJ=150,VGE=15V www.kedasemi.com - 3 - Rev1.1 November. 2011 Total 9 Pages KDG20N120H2 KDG20N120H2 Figure5:typical IGBT output characteristics
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: 2MBI100UA-120 | SKM150GB12T4
Keywords - KDG20N120H2 transistor datasheet
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History: 2MBI100UA-120 | SKM150GB12T4



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