KDG20N120H2 Datasheet. Specs and Replacement

Type Designator: KDG20N120H2  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 192 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 135 pF

Package: TO247

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KDG20N120H2 datasheet

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KDG20N120H2

KDG20N120H2 KDG20N120H2 Typical Performance Characteristics Figure1 maximum DC collector current Figure2 power dissipation VS. case temprature VS. case temprature Figure3 forward SOA,TC=25 ,TJ 150 Figure4 reverse bias SOA,TJ=150 ,VGE=15V www.kedasemi.com - 3 - Rev1.1 November. 2011 Total 9 Pages KDG20N120H2 KDG20N120H2 Figure5 typical IGBT output characteristics... See More ⇒

Specs: SIP30N60G21B, SIW30N60G21B, SIB30N60G21B, SIF30N65G21F, SIP30N65G21F, SIW30N65G21F, SIB30N65G21F, GT40T321, GT30J127, SKT030N065, ATT030N065EQ, ATT040K065EQ, ATT040N120EQ, ATT050K065FQC, ATT060U060EQ, ATT075N065EQ, JT010N065SED

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