All IGBT. KDG20N120H2 Datasheet

 

KDG20N120H2 IGBT. Datasheet pdf. Equivalent


   Type Designator: KDG20N120H2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 192
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 40
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.3
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 50
   Collector Capacity (Cc), typ, pF: 135
   Total Gate Charge (Qg), typ, nC: 120
   Package: TO247

 KDG20N120H2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

KDG20N120H2 Datasheet (PDF)

 ..1. Size:785K  1
kdg20n120h2.pdf

KDG20N120H2
KDG20N120H2

KDG20N120H2 KDG20N120H2 Typical Performance Characteristics Figure1:maximum DC collector current Figure2:power dissipation VS. case temprature VS. case temprature Figure3:forward SOA,TC=25,TJ150 Figure4:reverse bias SOA,TJ=150,VGE=15V www.kedasemi.com - 3 - Rev1.1 November. 2011 Total 9 Pages KDG20N120H2 KDG20N120H2 Figure5:typical IGBT output characteristics

Datasheet: SIP30N60G21B , SIW30N60G21B , SIB30N60G21B , SIF30N65G21F , SIP30N65G21F , SIW30N65G21F , SIB30N65G21F , GT40T321 , FGH60N60SMD , SKT030N065 , ATT030N065EQ , ATT040K065EQ , ATT040N120EQ , ATT050K065FQC , ATT060U060EQ , ATT075N065EQ , JT010N065SED .

 

 
Back to Top