JT030N065F7PD1E - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JT030N065F7PD1E
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 115 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 160 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
JT030N065F7PD1E Datasheet (PDF)
jt030n065f7pd1e.pdf

IGBT IGBT Modules RIGBT JT030N065F7PD1E MAIN CHARACTERISTICS Package IC 30A 650V V CESVcesat_typ1.75V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology
jt030n065wed jt030n065fed jt030n065sed.pdf

N N-CHANNEL IGBT RJT030N065WED/FED/SED MAIN CHARACTERISTICS Package 30 A IC 650V VCES 1.75V VCESAT-TYP APPLICATIONS General purpose inverters UPS UPS Motor Control FEATURES Low gate charge Trench F
jt030n065f6md1e.pdf

IGBT IGBT Modules RIGBT JT030N065F6MD1E MAIN CHARACTERISTICS Package IC 30A 650V V CESVcesat_typ1.75V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology
Otros transistores... JT015N120F7PD1E , JT020N065SED , JT020N065CED , JT020N065WED , JT020N065FED , JT020N135WED , JT030N065AED , JT030N065F6MD1E , IRG7R313U , JT030N065WED , JT030N065FED , JT030N065SED , JT040K065WED , JT040K065AED , JT050K120F2MA1E , JT050N065WED , JT050N120F2MA1E .
History: APT50GP60B2DF2 | IRG4BC30F | APTGF180SK60T | IXSN35N120AU1 | IXBF20N300 | HYG15P120H1K1 | MSG15T120FPE
History: APT50GP60B2DF2 | IRG4BC30F | APTGF180SK60T | IXSN35N120AU1 | IXBF20N300 | HYG15P120H1K1 | MSG15T120FPE



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