JT030N065F7PD1E IGBT. Datasheet pdf. Equivalent
Type Designator: JT030N065F7PD1E
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 115 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 160 pF
Package: MODULE
JT030N065F7PD1E Transistor Equivalent Substitute - IGBT Cross-Reference Search
JT030N065F7PD1E Datasheet (PDF)
jt030n065f7pd1e.pdf
IGBT IGBT Modules RIGBT JT030N065F7PD1E MAIN CHARACTERISTICS Package IC 30A 650V V CESVcesat_typ1.75V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology
jt030n065wed jt030n065fed jt030n065sed.pdf
N N-CHANNEL IGBT RJT030N065WED/FED/SED MAIN CHARACTERISTICS Package 30 A IC 650V VCES 1.75V VCESAT-TYP APPLICATIONS General purpose inverters UPS UPS Motor Control FEATURES Low gate charge Trench F
jt030n065f6md1e.pdf
IGBT IGBT Modules RIGBT JT030N065F6MD1E MAIN CHARACTERISTICS Package IC 30A 650V V CESVcesat_typ1.75V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology
Datasheet: JT015N120F7PD1E , JT020N065SED , JT020N065CED , JT020N065WED , JT020N065FED , JT020N135WED , JT030N065AED , JT030N065F6MD1E , FGPF4633 , JT030N065WED , JT030N065FED , JT030N065SED , JT040K065WED , JT040K065AED , JT050K120F2MA1E , JT050N065WED , JT050N120F2MA1E .
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