TP020N120CA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TP020N120CA
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 350
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 20
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.8
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 80
Capacitancia de salida (Cc), typ, pF: 120
Carga total de la puerta (Qg), typ, nC: 115
Paquete / Cubierta: TO-247
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TP020N120CA Datasheet (PDF)
tp020n120ca.pdf
N N-CHANNEL IGBT RIGBT TP020N120CA MAIN CHARACTERISTICS Package IC 20 A 1200 V V CESVcesat_typ1.8V Vge=15V APPLICATIONS General purpose inverters TO-247 Induction heating(IH) UPS UPS FEATURES Low ga
tp0202t.pdf
TP0202TVishay SiliconixP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYV(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)1.4 @ VGS = 10 V 1.3 to 3 V 0.41203.5 @ VGS = 4.5 V 1.3 to 3 V 0.27FEATURES BENEFITS APPLICATIONSD High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D
tp0202t.pdf
TP0202TVishay SiliconixP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYV(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)1.4 @ VGS = 10 V 1.3 to 3 V 0.41203.5 @ VGS = 4.5 V 1.3 to 3 V 0.27FEATURES BENEFITS APPLICATIONSD High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D
tp0202k.pdf
TP0202KVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA) Qg (Typ.)Available TrenchFET Power MOSFET1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 High-Side Switching- 30 10003.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 Low On-Resistance: 1.2 (typ.) Low T
tp0205a tp0205ad.pdf
TP0205A/ADNew ProductVishay SiliconixP-Channel 20-V (D-S) MOSFET, Low-ThresholdPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (mA)3.8 @ VGS = 4.5 V 180205.0 @ VGS = 2.5 V 100FEATURES BENEFITS APPLICATIONSD High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps,Hammers, Display, MemoriesD Low On-Resistance: 2.6 W (typ) D Low Offset (Error
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ