TP020N120CA Todos los transistores

 

TP020N120CA IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TP020N120CA

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 350 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 80 nS

Coesⓘ - Capacitancia de salida, typ: 120 pF

Encapsulados: TO-247

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TP020N120CA datasheet

 ..1. Size:1094K  jilin sino
tp020n120ca.pdf pdf_icon

TP020N120CA

N N-CHANNEL IGBT R IGBT TP020N120CA MAIN CHARACTERISTICS Package IC 20 A 1200 V V CES Vcesat_typ 1.8V Vge=15V APPLICATIONS General purpose inverters TO-247 Induction heating(IH) UPS UPS FEATURES Low ga

 9.1. Size:31K  1
tp0202t.pdf pdf_icon

TP020N120CA

TP0202T Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = 10 V 1.3 to 3 V 0.41 20 3.5 @ VGS = 4.5 V 1.3 to 3 V 0.27 FEATURES BENEFITS APPLICATIONS D High-Side Switching D Ease in Driving Switches D Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D

 9.2. Size:38K  vishay
tp0202t.pdf pdf_icon

TP020N120CA

TP0202T Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = 10 V 1.3 to 3 V 0.41 20 3.5 @ VGS = 4.5 V 1.3 to 3 V 0.27 FEATURES BENEFITS APPLICATIONS D High-Side Switching D Ease in Driving Switches D Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D

 9.3. Size:210K  vishay
tp0202k.pdf pdf_icon

TP020N120CA

TP0202K Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) VGS(th) (V) ID (mA) Qg (Typ.) Available TrenchFET Power MOSFET 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 High-Side Switching - 30 1000 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 Low On-Resistance 1.2 (typ.) Low T

Otros transistores... JT100K120F2MA1E , JT150N120F2MA1E , JT450N120F2MH1E , JT450N120F2MHTE , JT600N065F2MH1E , JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , TGAN60N60F2DS , TT010N060EQ , TT010N120EI , TT010N120EQ , TT015N060EQ , TT015N120EQ , TT025N120EQ , TT025N120FQ , TT025U120EQ .

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History: TA49014

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