TP020N120CA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TP020N120CA
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 350 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 80 nS
Coesⓘ - Capacitancia de salida, typ: 120 pF
Paquete / Cubierta: TO-247
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TP020N120CA Datasheet (PDF)
tp020n120ca.pdf
N N-CHANNEL IGBT RIGBT TP020N120CA MAIN CHARACTERISTICS Package IC 20 A 1200 V V CESVcesat_typ1.8V Vge=15V APPLICATIONS General purpose inverters TO-247 Induction heating(IH) UPS UPS FEATURES Low ga
tp0202t.pdf
TP0202TVishay SiliconixP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYV(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)1.4 @ VGS = 10 V 1.3 to 3 V 0.41203.5 @ VGS = 4.5 V 1.3 to 3 V 0.27FEATURES BENEFITS APPLICATIONSD High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D
tp0202t.pdf
TP0202TVishay SiliconixP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYV(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)1.4 @ VGS = 10 V 1.3 to 3 V 0.41203.5 @ VGS = 4.5 V 1.3 to 3 V 0.27FEATURES BENEFITS APPLICATIONSD High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D
tp0202k.pdf
TP0202KVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA) Qg (Typ.)Available TrenchFET Power MOSFET1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 High-Side Switching- 30 10003.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 Low On-Resistance: 1.2 (typ.) Low T
tp0205a tp0205ad.pdf
TP0205A/ADNew ProductVishay SiliconixP-Channel 20-V (D-S) MOSFET, Low-ThresholdPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (mA)3.8 @ VGS = 4.5 V 180205.0 @ VGS = 2.5 V 100FEATURES BENEFITS APPLICATIONSD High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps,Hammers, Display, MemoriesD Low On-Resistance: 2.6 W (typ) D Low Offset (Error
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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