All IGBT. TP020N120CA Datasheet

 

TP020N120CA IGBT. Datasheet pdf. Equivalent


   Type Designator: TP020N120CA
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 350
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 20
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 80
   Collector Capacity (Cc), typ, pF: 120
   Total Gate Charge (Qg), typ, nC: 115
   Package: TO-247

 TP020N120CA Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

TP020N120CA Datasheet (PDF)

 ..1. Size:1094K  jilin sino
 tp020n120ca.pdf

TP020N120CA TP020N120CA

N N-CHANNEL IGBT RIGBT TP020N120CA MAIN CHARACTERISTICS Package IC 20 A 1200 V V CESVcesat_typ1.8V Vge=15V APPLICATIONS General purpose inverters TO-247 Induction heating(IH) UPS UPS FEATURES Low ga

 9.1. Size:31K  1
 tp0202t.pdf

TP020N120CA TP020N120CA

TP0202TVishay SiliconixP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYV(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)1.4 @ VGS = 10 V 1.3 to 3 V 0.41203.5 @ VGS = 4.5 V 1.3 to 3 V 0.27FEATURES BENEFITS APPLICATIONSD High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D

 9.2. Size:38K  vishay
 tp0202t.pdf

TP020N120CA TP020N120CA

TP0202TVishay SiliconixP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYV(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)1.4 @ VGS = 10 V 1.3 to 3 V 0.41203.5 @ VGS = 4.5 V 1.3 to 3 V 0.27FEATURES BENEFITS APPLICATIONSD High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D

 9.3. Size:210K  vishay
 tp0202k.pdf

TP020N120CA TP020N120CA

TP0202KVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA) Qg (Typ.)Available TrenchFET Power MOSFET1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 High-Side Switching- 30 10003.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 Low On-Resistance: 1.2 (typ.) Low T

 9.4. Size:41K  vishay
 tp0205a tp0205ad.pdf

TP020N120CA TP020N120CA

TP0205A/ADNew ProductVishay SiliconixP-Channel 20-V (D-S) MOSFET, Low-ThresholdPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (mA)3.8 @ VGS = 4.5 V 180205.0 @ VGS = 2.5 V 100FEATURES BENEFITS APPLICATIONSD High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps,Hammers, Display, MemoriesD Low On-Resistance: 2.6 W (typ) D Low Offset (Error

Datasheet: JT100K120F2MA1E , JT150N120F2MA1E , JT450N120F2MH1E , JT450N120F2MHTE , JT600N065F2MH1E , JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , SGP30N60 , TT010N060EQ , TT010N120EI , TT010N120EQ , TT015N060EQ , TT015N120EQ , TT025N120EQ , TT025N120FQ , TT025U120EQ .

 

 
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