TP020N120CA - аналоги и описание IGBT

N N-CHANNEL IGBT R IGBT TP020N120CA MAIN CHARACTERISTICS Package IC 20 A 1200 V V CES Vcesat_typ 1.8V Vge=15V APPLICATIONS General purpose inverters TO-247 Induction heating(IH) UPS UPS FEATURES Low ga

TP0202T Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = 10 V 1.3 to 3 V 0.41 20 3.5 @ VGS = 4.5 V 1.3 to 3 V 0.27 FEATURES BENEFITS APPLICATIONS D High-Side Switching D Ease in Driving Switches D Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D

TP0202T Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = 10 V 1.3 to 3 V 0.41 20 3.5 @ VGS = 4.5 V 1.3 to 3 V 0.27 FEATURES BENEFITS APPLICATIONS D High-Side Switching D Ease in Driving Switches D Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D

TP0202K Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) VGS(th) (V) ID (mA) Qg (Typ.) Available TrenchFET Power MOSFET 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 High-Side Switching - 30 1000 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 Low On-Resistance 1.2 (typ.) Low T

TP0205A/AD New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET, Low-Threshold PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 3.8 @ VGS = 4.5 V 180 20 5.0 @ VGS = 2.5 V 100 FEATURES BENEFITS APPLICATIONS D High-Side Switching D Ease in Driving Switches D Drivers Relays, Solenoids, Lamps, Hammers, Display, Memories D Low On-Resistance 2.6 W (typ) D Low Offset (Error