TT030N065EI Todos los transistores

 

TT030N065EI - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TT030N065EI
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 71
   Tensión máxima colector-emisor |Vce|, V: 650
   Tensión máxima puerta-emisor |Vge|, V: 30
   Colector de Corriente Continua a 25℃ |Ic|, A: 60
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.7
   Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 67
   Capacitancia de salida (Cc), typ, pF: 160
   Carga total de la puerta (Qg), typ, nC: 64.5
   Paquete / Cubierta: TO-3PH

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TT030N065EI Datasheet (PDF)

 ..1. Size:1641K  jilin sino
tt030n065ei.pdf

TT030N065EI TT030N065EI

N N-CHANNEL IGBT RTT030N065EI MAIN CHARACTERISTICS Package I 30A CV 650V CESV -TYP 1.7V CE satAPPLICATIONS White electricity field E FEATURES C G Low gate charge TO-3PH Trench FS Trench FS Technology RoHS

 4.1. Size:1550K  jilin sino
att030n065eq.pdf

TT030N065EI TT030N065EI

N N-CHANNEL IGBT RATT030N065EQ MAIN CHARACTERISTICS Package I 30A CV 650V CEV -TYP 1.7V CE satAPPLICATIONS General purpose inverters UPS UPS Motor Control FEATURES Low gate charge Trench FS

 9.1. Size:1324K  jilin sino
tt030u065fba.pdf

TT030N065EI TT030N065EI

N N-CHANNEL IGBT RTT030U065FBA MAIN CHARACTERISTICS Package IC 30A VCES 650V Vcesat-typ 1.7V APPLICATIONS Power factor corrector PFC FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS RoHS product

 9.2. Size:1002K  jilin sino
tt030k065eq.pdf

TT030N065EI TT030N065EI

N N-CHANNEL IGBT RTT030K065EQ MAIN CHARACTERISTICS Package 30 A IC 650V VCES 1.7V VCESAT-TYP APPLICATIONS PFC Power factor corrector (PFC) UPS UPS FEATURES Low gate charge Trench FS Technology Trench FS RoHS

 9.3. Size:1033K  jilin sino
tt030u065fq.pdf

TT030N065EI TT030N065EI

N N-CHANNEL IGBT RTT030U065FQ MAIN CHARACTERISTICS Package IC 30A VCE 650V Vcesat-typ 1.7V APPLICATIONS Power factor corrector PFC Energy Storage TO-263 FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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