TT030N065EI Specs and Replacement
Type Designator: TT030N065EI
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 71 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 67 nS
Coesⓘ - Output Capacitance, typ: 160 pF
Package: TO-3PH TT030N065EI Substitution - IGBT ⓘ Cross-Reference Search
TT030N065EI datasheet
tt030u065fba.pdf
N N-CHANNEL IGBT R TT030U065FBA MAIN CHARACTERISTICS Package IC 30A VCES 650V Vcesat-typ 1.7V APPLICATIONS Power factor corrector PFC FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS RoHS product ... See More ⇒
tt030k065eq.pdf
N N-CHANNEL IGBT R TT030K065EQ MAIN CHARACTERISTICS Package 30 A IC 650V VCES 1.7V VCE SAT-TYP APPLICATIONS PFC Power factor corrector (PFC) UPS UPS FEATURES Low gate charge Trench FS Technology Trench FS RoHS ... See More ⇒
Specs: TT010N120EI , TT010N120EQ , TT015N060EQ , TT015N120EQ , TT025N120EQ , TT025N120FQ , TT025U120EQ , TT030K065EQ , FGH30S130P , TT030U065FBA , TT030U065FQ , TT040K120EQ , TT040U060EQ , TT040U065FB , TT040U120EQ , TT050K065FQ , TT050U065FB .
History: RJH1CV6DPK | RJH60D7BDPQ-E0 | SGM200HF12A3TFD | VS-GB600AH120N | T1200TB25A | VS-GT75NP120N | TT030U065FBA
Keywords - TT030N065EI transistor spec
TT030N065EI cross reference
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History: RJH1CV6DPK | RJH60D7BDPQ-E0 | SGM200HF12A3TFD | VS-GB600AH120N | T1200TB25A | VS-GT75NP120N | TT030U065FBA
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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