TT100N120PF1E Todos los transistores

 

TT100N120PF1E - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TT100N120PF1E
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 515
   Tensión máxima colector-emisor |Vce|, V: 1200
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 100
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.9
   Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 63
   Capacitancia de salida (Cc), typ, pF: 700
   Carga total de la puerta (Qg), typ, nC: 450
   Paquete / Cubierta: MODULE

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TT100N120PF1E Datasheet (PDF)

 ..1. Size:1445K  jilin sino
tt100n120pf1e.pdf

TT100N120PF1E
TT100N120PF1E

IGBT IGBT Modules RIGBT TT100N120PF1E MAIN CHARACTERISTICS Package IC 100A 1200V V CESVcesat_typ1.9V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology

 8.1. Size:274K  ixys
ixtk100n25p ixtt100n25p ixtq100n25p.pdf

TT100N120PF1E
TT100N120PF1E

IXTK 100N25P VDSS = 250 VPolarHTTMIXTQ 100N25P ID25 = 100 APower MOSFET IXTT 100N25P RDS(on) 27 m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VGD (TAB)DSVGSM Transient 30 VID

 8.2. Size:123K  utc
utt100n08.pdf

TT100N120PF1E
TT100N120PF1E

UNISONIC TECHNOLOGIES CO., LTD UTT100N08 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N08 is an N-channel enhancement mode Power FET using UTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation

 8.3. Size:123K  utc
utt100n05.pdf

TT100N120PF1E
TT100N120PF1E

UNISONIC TECHNOLOGIES CO., LTD UTT100N05 Preliminary Power MOSFET 100A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customers with minimum on-state resistance and superior switchingperformance. FEATURES * RDS(ON)= 7m @ VGS=10V, ID= 50A RDS(ON)= 10m @ VGS=4.5V,

 8.4. Size:160K  utc
utt100n06.pdf

TT100N120PF1E
TT100N120PF1E

UNISONIC TECHNOLOGIES CO., LTD UTT100N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N06 is an N-channel enhancement mode 1Power FET using UTCs advanced technology to provide customers TO-220with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutatio

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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Recientemente añadidas las descripciónes de los transistores

IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ

 

 

 
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