TT100N120PF1E - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TT100N120PF1E
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 515 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 63 nS
Coesⓘ - Capacitancia de salida, typ: 700 pF
Paquete / Cubierta: MODULE
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Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: SGH80N60UF | RJP6065DPM | RJH60M6DPQ-A0 | RJP63F3DPP-M0 | APT15GP60BDQ1 | TT075U065FBC
History: SGH80N60UF | RJP6065DPM | RJH60M6DPQ-A0 | RJP63F3DPP-M0 | APT15GP60BDQ1 | TT075U065FBC
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