TT100N120PF1E PDF and Equivalents Search

IGBT IGBT Modules R IGBT TT100N120PF1E MAIN CHARACTERISTICS Package IC 100A 1200V V CES Vcesat_typ 1.9V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology ... See More ⇒

IXTK 100N25P VDSS = 250 V PolarHTTM IXTQ 100N25P ID25 = 100 A Power MOSFET IXTT 100N25P RDS(on) 27 m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGSS Continuous 20 V G D (TAB) DS VGSM Transient 30 V ID... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD UTT100N08 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N08 is an N-channel enhancement mode Power FET using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD UTT100N05 Preliminary Power MOSFET 100A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with minimum on-state resistance and superior switching performance. FEATURES * RDS(ON)= 7m @ VGS=10V, ID= 50A RDS(ON)= 10m @ VGS=4.5V,... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD UTT100N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N06 is an N-channel enhancement mode 1 Power FET using UTC s advanced technology to provide customers TO-220 with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutatio... See More ⇒