TT100N120PF1E IGBT. Datasheet pdf. Equivalent
Type Designator: TT100N120PF1E
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 515
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 100
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 63
Collector Capacity (Cc), typ, pF: 700
Total Gate Charge (Qg), typ, nC: 450
Package: MODULE
TT100N120PF1E Transistor Equivalent Substitute - IGBT Cross-Reference Search
TT100N120PF1E Datasheet (PDF)
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Datasheet: TT050U065FBC , TT060U060EQ , TT060U065FB , TT060U065FQ , TT075N065EQ , TT075N120EBC , TT075U065FBC , TT075U065FQB , GT30F125 , , , , , , , , .
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IGBT: TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ | TT060U065FB | TT060U060EQ | TT050U065FBC | TT050U065FB | TT050K065FQ