Справочник IGBT. TT100N120PF1E

 

TT100N120PF1E - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: TT100N120PF1E
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 515 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 63 nS
   Coesⓘ - Выходная емкость, типовая: 700 pF
   Qgⓘ - Общий заряд затвора, typ: 450 nC
   Тип корпуса: MODULE

 Аналог (замена) для TT100N120PF1E

 

 

TT100N120PF1E Datasheet (PDF)

 ..1. Size:1445K  jilin sino
 tt100n120pf1e.pdf

TT100N120PF1E TT100N120PF1E

IGBT IGBT Modules RIGBT TT100N120PF1E MAIN CHARACTERISTICS Package IC 100A 1200V V CESVcesat_typ1.9V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology

 8.1. Size:274K  ixys
 ixtk100n25p ixtt100n25p ixtq100n25p.pdf

TT100N120PF1E TT100N120PF1E

IXTK 100N25P VDSS = 250 VPolarHTTMIXTQ 100N25P ID25 = 100 APower MOSFET IXTT 100N25P RDS(on) 27 m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VGD (TAB)DSVGSM Transient 30 VID

 8.2. Size:123K  utc
 utt100n08.pdf

TT100N120PF1E TT100N120PF1E

UNISONIC TECHNOLOGIES CO., LTD UTT100N08 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N08 is an N-channel enhancement mode Power FET using UTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation

 8.3. Size:123K  utc
 utt100n05.pdf

TT100N120PF1E TT100N120PF1E

UNISONIC TECHNOLOGIES CO., LTD UTT100N05 Preliminary Power MOSFET 100A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customers with minimum on-state resistance and superior switchingperformance. FEATURES * RDS(ON)= 7m @ VGS=10V, ID= 50A RDS(ON)= 10m @ VGS=4.5V,

 8.4. Size:160K  utc
 utt100n06.pdf

TT100N120PF1E TT100N120PF1E

UNISONIC TECHNOLOGIES CO., LTD UTT100N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N06 is an N-channel enhancement mode 1Power FET using UTCs advanced technology to provide customers TO-220with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutatio

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History: FGH40N60SMDF

 

 
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