Справочник IGBT. TT100N120PF1E

 

TT100N120PF1E - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: TT100N120PF1E
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 515
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 100
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.9
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.5
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 63
   Емкость коллектора типовая (Cc), pf: 700
   Общий заряд затвора (Qg), typ, nC: 450
   Тип корпуса: MODULE

 Аналог (замена) для TT100N120PF1E

 

 

TT100N120PF1E Datasheet (PDF)

 ..1. Size:1445K  jilin sino
 tt100n120pf1e.pdf

TT100N120PF1E TT100N120PF1E

IGBT IGBT Modules RIGBT TT100N120PF1E MAIN CHARACTERISTICS Package IC 100A 1200V V CESVcesat_typ1.9V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology

 8.1. Size:274K  ixys
 ixtk100n25p ixtt100n25p ixtq100n25p.pdf

TT100N120PF1E TT100N120PF1E

IXTK 100N25P VDSS = 250 VPolarHTTMIXTQ 100N25P ID25 = 100 APower MOSFET IXTT 100N25P RDS(on) 27 m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VGD (TAB)DSVGSM Transient 30 VID

 8.2. Size:123K  utc
 utt100n08.pdf

TT100N120PF1E TT100N120PF1E

UNISONIC TECHNOLOGIES CO., LTD UTT100N08 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N08 is an N-channel enhancement mode Power FET using UTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation

 8.3. Size:123K  utc
 utt100n05.pdf

TT100N120PF1E TT100N120PF1E

UNISONIC TECHNOLOGIES CO., LTD UTT100N05 Preliminary Power MOSFET 100A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customers with minimum on-state resistance and superior switchingperformance. FEATURES * RDS(ON)= 7m @ VGS=10V, ID= 50A RDS(ON)= 10m @ VGS=4.5V,

 8.4. Size:160K  utc
 utt100n06.pdf

TT100N120PF1E TT100N120PF1E

UNISONIC TECHNOLOGIES CO., LTD UTT100N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N06 is an N-channel enhancement mode 1Power FET using UTCs advanced technology to provide customers TO-220with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutatio

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